CXT5401E TR Allicdata Electronics
Allicdata Part #:

CXT5401ETR-ND

Manufacturer Part#:

CXT5401E TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS PNP
More Detail: Bipolar (BJT) Transistor PNP 220V 600mA 300MHz 1.2...
DataSheet: CXT5401E TR datasheetCXT5401E TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 220V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Power - Max: 1.2W
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Description

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The CXT5401E TR is a high-power npn transistors. It is a bipolar junction transistor (BJT) with a single device package, and is capable of withstanding high power and high current outputs. This application field and working principle of this device can be used in a wide range of applications.

Applications

The CXT5401E TR\'s capabilities make it very suitable for use in power amplification. It is an efficient device with the ability to output large amounts of power, making it suitable for powering devices such as amplifiers, speakers, and receivers. As a high-power transistor, the CXT5401E TR can also be used in power supply and related circuits. The device can also be used in motor control, pulse circuits, lighting systems, and communication applications.

Working Principle

The CXT5401E TR consists of three terminals. The emitter terminal is the connection point between the emitter and the base of the transistor. The current flows from the emitter to the base, where it is amplified by the gain of the transistor, and then to the collector. The collector is the output terminal of the transistor, and the current continues to flow out of the collector and into the load. The CXT5401E TR works by using an input current at the base to control the output current at the collector. The gain of the transistor amplifies the input current and allows more current to be outputted from the collector. This amplified current then supplies power to the load, and the load can use this power to perform its functions.The gain of the CXT5401E TR is controlled by the ratio of the collector current to the base current. The higher the ratio, the higher the gain. The gain of the device can be adjusted by altering the base voltage; higher voltage will result in higher gain, and lower voltage will result in lower gain.

Conclusion

The CXT5401E TR is a high-power npn transistor, suitable for use in a wide range of applications. It has the ability to withstand high power and current outputs, and can be used in power amplification, power supply, motor control, pulse circuits, lighting systems, and communication applications. The device works by using an input current at the base to control the output current at the collector, and the gain of the transistor can be adjusted by changing the voltage of the base.

The specific data is subject to PDF, and the above content is for reference

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