CXT5551E TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CXT5551E TR is a transistor categorized under Single Bipolar Junction Transistor (BJT). A BJT is a type of electronic device widely used for their ability to amplify signals and power. The CXT5551E TR is a NPN transistor with a maximum collector current capacity of 1 Amp, a maximum voltage voltage of 30V, and a maximum power dissipation of 75W. This versatile device is designed to be used in a wide range of applications, including:

• Power switching applications
• Robotics and machine control
• Automotive and industrial electronics
• Communication and data systems
• Computer, laboratory and test equipment

The CXT5551E TR is a junction formed by a single P-type semiconductor and a single N-type semiconductor. It consists of a base layer and two collector/emitter layers. During operation, a current is passed into the base layer, which modifies the conductivity of the collector/emitter layers. This allows current to flow from the collector to the emitter and is what allows this device to amplify signals and power.

In the CXT5551E TR, the base layer is a single P-type semiconductor that is formed using doped silicon or germanium. It has a low resistance to current flow and is often referred to as the “gate”. The collector/emitter layers are N-type semiconductors, which are formed using doped silicon or germanium. This “p-n” junction serves as a bidirectional switch, allowing current to flow in both directions depending on the current applied to the base layer.

During operation, the small current that is applied to the base layer is amplified at the collector layer. This increases the current flow and is known as current gain or “beta”, which is a measure of the transistor’s gain. This gain can be adjusted by changing the amount of current applied to the base layer. A higher current will result in a higher gain and vice versa.

In addition to amplifying signals and power, the CXT5551E TR can also be used as an analog switch, providing high speed switching with low power consumption and low voltage losses. This makes it an ideal choice for use in high speed switching applications. Other features include low input capacitance and low leakage current, making this device popular for applications where low power dissipation and low on-state resistance are key.

The CXT5551E TR is a versatile and reliable device, making it an ideal choice for a variety of applications. Its simple circuit design and low power dissipation make it easy to use and suitable for a variety of applications ranging from power switching to analog switching. Its high speed switching capabilities and low voltage losses yield high performance and make it a popular choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference