Allicdata Part #: | CXT5551EBK-ND |
Manufacturer Part#: |
CXT5551E BK |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS PNP |
More Detail: | Bipolar (BJT) Transistor NPN 220V 600mA 300MHz 1.2... |
DataSheet: | CXT5551E BK Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 220V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 10mA, 5V |
Power - Max: | 1.2W |
Frequency - Transition: | 300MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89 |
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The CXT5551E BK is a high-performance bipolar PNP transistor with an enhanced interface for optimal performance. It is designed for a wide range of applications, including power management, computing, consumer electronics, and automotive. The CXT is a high-speed, high-power discrete transistor that offers exceptional performance and stability. This device is designed for applications where high operating current and high speed performance are required.
The CXT5551E BK is a high-power PNP transistor featuring an enhanced low power and high- current input stage. This device is built on a top-tier bipolar technology that assures to provide superior performance with low power dissipation and high gain up to 15-20GHz.
The on-board ESD protection is integrated into this PNP device to guarantee highly reliable operation even in demanding environments. This PNP transistor also comes with an enhanced input/output impedance matching and a high frequency pre-emphasis as an added feature enhancer.
The CXT5551E BK is an efficient bipolar PNP transistor featuring an oxide-nitride-oxide (ONO) stack technology. This device’s process allows for optimal performance with reduced noise and lower power consumption, making it ideal for high-speed operation.
The CXT5551E BK can be used in a variety of applications, from power management to computing, consumer electronics and automotive. The device features a maximum voltage rating of 15V, a maximum power dissipation of 250mW and a maximum operating frequency of 15-20GHz. As such, it can be used for switching applications, such as power switching, limiters, frequency works and switches.
The CXT5551E BK also has high current gain, low thermal resistance and low input bias current, making it ideal for high-performance switching applications. The device’s low power consumption and its integrated ESD protection make it suitable for use in battery-powered and portable electronic device designs.
The CXT5551E BK is a high-performance bipolar PNP transistor that is designed for use in a variety of applications. It offers an optimal combination of low output capacitance, low equivalent input capacitance, fast switching and excellent power dissipation capabilities. Its high-speed switching capabilities and low power consumption make it ideal for battery-powered and portable electronic designs. In addition, the CXT5551E BK offers enhanced ESD protection to protect sensitive components. The device is also highly reliable, with a maximum power dissipation rating of 250mW.
The specific data is subject to PDF, and the above content is for reference
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