CY15B004J-SXET Allicdata Electronics
Allicdata Part #:

CY15B004J-SXET-ND

Manufacturer Part#:

CY15B004J-SXET

Price: $ 0.99
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FRAM 4K I2C 3.4MHZ
More Detail: FRAM (Ferroelectric RAM) Memory IC 4Kb (512 x 8) I...
DataSheet: CY15B004J-SXET datasheetCY15B004J-SXET Datasheet/PDF
Quantity: 1000
2500 +: $ 0.90850
Stock 1000Can Ship Immediately
$ 0.99
Specifications
Series: Automotive, AEC-Q100, F-RAM™
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 4Kb (512 x 8)
Clock Frequency: 3.4MHz
Write Cycle Time - Word, Page: --
Memory Interface: I²C
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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CY15B004J-SXET is a family of memory devices, usually used in automotive applications. It is a single-wafer, dual-die DRAM device with a smaller footprint than traditional DRAM devices. This makes it ideal for automotive systems that require a high degree of integration while maintaining a low cost. CY15B004J-SXET consists of two dies, each with its own controller and memory array.

The primary application field of CY15B004J-SXET is automotive, which requires a high level of integration and performance. The memory device can be used in a variety of applications, including engine control, transmission control, and electronic stability control, making it suitable for most microcontroller-based automotive systems.

The working principle of CY15B004J-SXET is based on the synchronous dynamic random access memory (SDRAM) architecture. The memory device consists of two independent static RAM (SRAM) memories, each of which can store a different set of data. Each SRAM memory can be read or written asynchronously, allowing for a high degree of parallelism, which helps to optimize system performance. The device also has an additional "burst mode", in which multiple addresses can be read or written in one operation, further increasing the performance of the system.

Each SRAM memory contains two ports, one for read and one for write. Each port is capable of transferring data at a rate of 5Mbit/s. The SDRAM architecture enables the device to transfer data more quickly than SRAM memories, allowing for faster access times and better system performance. The memory device also has an internal FIFO buffer that can be used to store data so that multiple components can access it with minimal latency.

The CY15B004J-SXET is designed to operate in a wide range of temperatures, ranging from -40°C to 85°C. This wide temperature range enables the device to be used in a variety of applications, including those in the automotive industry. The device is also designed to operate at high clock frequencies, up to 133MHz, making it suitable for use in high-performance systems.

In summary, CY15B004J-SXET is a family of memory devices designed for automotive applications. It consists of two static RAM memories with two ports each and an additional FIFO buffer. The device is capable of operating at a wide range of temperatures and clock frequencies, making it suitable for use in a variety of applications. The SDRAM architecture enables the device to provide a higher level of performance than traditional SRAM memories.

The specific data is subject to PDF, and the above content is for reference

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