CY15B004Q-SXAT Allicdata Electronics
Allicdata Part #:

CY15B004Q-SXAT-ND

Manufacturer Part#:

CY15B004Q-SXAT

Price: $ 0.99
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FRAM 4K SPI 16MHZ
More Detail: FRAM (Ferroelectric RAM) Memory IC 4Kb (512 x 8) S...
DataSheet: CY15B004Q-SXAT datasheetCY15B004Q-SXAT Datasheet/PDF
Quantity: 1000
2500 +: $ 0.90850
Stock 1000Can Ship Immediately
$ 0.99
Specifications
Series: Automotive, AEC-Q100, F-RAM™
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 4Kb (512 x 8)
Clock Frequency: 16MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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Memory is an essential element in any computing system, particularly for storing data and retrieving it quickly. The CY15B004Q-SXAT is a nonvolatile configuration memory designed for high-performance, low-power operations. It is typically used in applications such as embedded control systems, medical, aerospace, and automotive control systems for storage of configuration data, encryption data, and performance profile information.

The CY15B004Q-SXAT is a single-transistor type electrically-erasable programmable read-only memory (EEPROM). It has 512 bits of memory divided into four pages of 128 bits each. It features an energy-efficient, single-ended write/erase architecture along with full flexibility in selecting a single-bit write or multiple-bit page write operations. High reliability and immunity to radiation make CY15B004Q-SXAT an ideal memory for harsh environments. Additionally, the EEPROM offers flexibility in controlling write speed, allowing the user to select different write times for different portions of memory.

The operational principle behind CY15B004Q-SXAT is relatively straightforward. The data is stored in the form of an array of MOSFET transistors. The bits are represented by the presence or absence of a transistor in each bit cell. The transistors can be programmed or erased by applying a voltage to the gate of the transistor. Writing to the memory is accomplished by applying a positive voltage on the gate of the desired bit cell. This causes the charge stored on the gate to be transferred to the drain, enabling the flow of current and thus programming the bit. Erasing is accomplished by applying a negative voltage to the gate. This causes the charge to be removed, thus disabling the flow of current and thus erasing the bit.

The CY15B004Q-SXAT is an indispensable component in most modern embedded systems. Its ability to reliably store configuration data, encryption information and performance profiling makes it an ideal choice for harsh environments that demand reliability and high performance. Its single-transistor architecture makes it a low-power operation that can be integrated into a variety of system, ranging from medical and aerospace applications all the way to automotive control systems.

The specific data is subject to PDF, and the above content is for reference

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