CY15B016J-SXET Allicdata Electronics
Allicdata Part #:

CY15B016J-SXET-ND

Manufacturer Part#:

CY15B016J-SXET

Price: $ 1.11
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FRAM 16K I2C 1MHZ
More Detail: FRAM (Ferroelectric RAM) Memory IC 16Kb (2K x 8) I...
DataSheet: CY15B016J-SXET datasheetCY15B016J-SXET Datasheet/PDF
Quantity: 1000
2500 +: $ 1.00923
Stock 1000Can Ship Immediately
$ 1.11
Specifications
Series: Automotive, AEC-Q100, F-RAM™
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 16Kb (2K x 8)
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: --
Memory Interface: I²C
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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CY15B016J-SXET is a high-density, non-volatile serial-electrically erasable and programmable read only memory (EEPROM) device. It was designed to offer an easy cost-effective solution to upgrade system applications or non-volatile memory storage requirements. The EEPROM can be accessed directly from the device through a three-wire serial port and is organized as 8192 words of 16 bits each with an interface that is compatible with standard Serial Peripheral Interface (SPI) protocol.

Application Field

The CY15B016J-SXET is ideal for applications requiring information to be automatically stored by the system such as programmable data, micro-controller code storage, serial number storage, parameter storage, and calibration values storage. It is also useful for applications needing frequent changes ranging from user configuration settings to dynamic field segmentation of communication portals. Other applications include gaming consoles, networking devices and embedded controllers.

Working Principle

The CY15B016J-SXET EEPROM operates by applying input signals to programmable devices and by controlling various states of the devices by manipulating the digital data lines. The devices are configured with two data latch lines, a write enable line and two power supply lines and can be operated in both active-low and active-high modes. At any given time, a chip can be in either one of the three states: write, read or erase.

To program the device, data is written to the buffer and then it is written from the buffer to the memory cell. The write process is performed by adjusting the voltage level of the write enable line, which in turn controls the data cell multiplexer and write enable line. To erase the data, the erase pulse is applied to the data cell multiplexer. This pulse allows for erasing data from the memory cell.

For reading the data from the EEPROM, the voltage level of write enable line is adjusted to allow the device to enter the read mode. In this mode, data is read from the EEPROM by applying voltage levels to the addressing pins. This data is transferred through the data bus to an internal buffer, where it can be read.

Conclusion

The CY15B016J-SXET is an effective non-volatile memory solution designed for applications requiring reliable long-term storage of data. Its cost-efficient design and easy integration with existing systems make it a popular choice for applications involving upgradeability or non-volatile memory storage. The EEPROM is capable of storing data for up to 5 million cycles and is available in a variety of configurations. With its wide-ranging applications and ease of use, the CY15B016J-SXET is an ideal choice for any application.

The specific data is subject to PDF, and the above content is for reference

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