CY15E016J-SXAT

CY15E016J-SXAT Application Field and Working Principle

The CY15E016J-SXAT is an electrically erasable programmable read-only memory (EEPROM). It was first introduced by Cypress Semiconductor Corporation in 2010 and, since then, has become one of the most popular EEPROMs for embedded applications. The CY15E016J-SXAT offers various features including a large capacity of up to 16 Megabits, high speed access (up to 66MHz), voltage supply range from 2.7 to 3.6V, and advanced write protection.

The CY15E016J-SXAT is suitable for a wide range of applications requiring non-volatile memory, such as program and data storage for consumer electronics, set-top boxes, wireless devices, and automotive applications. As an EEPROM, the CY15E016J-SXAT provides a write-once memory with unlimited read cycles, allowing users to store data permanently even during power loss.

Working Principle

The CY15E016J-SXAT operates on the principle of Fowler-Nordheim tunneling. In this process, electrons are tunneled from a floating gate to the control gate to perform the two most basics operations: erasing and writing. To erase a bit, the gate is connected to the negative power supply and electrons tunnel towards the floating gate and leave it. To write a bit, the gate is connected to the positive power supply and electrons tunnel from the source to the floating gate and enter it.

This process requires the application of high voltages to perform. In the case of the CY15E016J-SXAT, the voltages are provided through the VCC pins. The voltage level VCC selects the write cycle and thus controls the writing process of the memory.

Features and Benefits

The CY15E016J-SXAT offers a variety of features and benefits. It has a large storage capacity of up to 16 Megabits, allowing it to store large amounts of data. It also has a wide voltage supply range (2.7V to 3.6V), allowing it to be used in a variety of applications. Furthermore, it has access speeds of up to 66MHz, making it suitable for high-speed data handling and operations. Finally, its advanced write protection ensures that data stored in the memory is not accidentally erased.

Conclusion

The CY15E016J-SXAT is a highly reliable and versatile electrically erasable programmable read-only memory (EEPROM) for embedded applications. It has a large storage capacity of up to 16 Megabits, a wide voltage supply range (2.7V to 3.6V), access speeds of up to 66MHz, and advanced write protection. The EEPROM is suitable for a wide range of applications and offers a variety of features and benefits that make it an ideal choice for embedded systems.