CY15B102Q-SXE Allicdata Electronics
Allicdata Part #:

428-4293-ND

Manufacturer Part#:

CY15B102Q-SXE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FRAM 2M SPI 25MHZ 8SOIC
More Detail: FRAM (Ferroelectric RAM) Memory IC 2Mb (256K x 8) ...
DataSheet: CY15B102Q-SXE datasheetCY15B102Q-SXE Datasheet/PDF
Quantity: 2126
Stock 2126Can Ship Immediately
Specifications
Series: Automotive, AEC-Q100, F-RAM™
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 2Mb (256K x 8)
Clock Frequency: 25MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 2 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC
Description

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CY15B102Q-SXE is a memory device from Cypress Semiconductor Corporation. It is a serial nonvolatile memory that combines an I2C serial interface with a Quad SPI interface for easy integration. The device offers the highest performance and reliability for automotive, industrial, and consumer applications is the industry.

The CY15B102Q-SXE device features 25MHz I2C/ SPI interfaces internally and can support up to a 400MHz Quad SPI interface. It also has an extended operating temperature range of -40 to +125°C, making it ideal for harsh environments. It has 2K bits of onboard nonvolatile EEPROM, and offers up to 64Mbits of memory density with page sizes of 16 bytes (128 bits) to 4K bytes (32K bits).

The CY15B102Q-SXE device is a dual I2C/Quad SPI Flash device, allowing for flexibility in the choice of communication interface. It is also compatible with standard flash memory protocols such as Open NAND Flash Interface (ONFI) and Hard Disk Drive\'s (HDD) Advanced Technology Attachment Packet Interface (ATAPI).

The CY15B102Q-SXE has a variety of modes for writing and reading data. In order to program data in the nonvolatile memory, the I2C/Quad SPI interface must be used, and the programming protocol is determined by the mode of operations. The device can be programmed either by programming the entire page in one go or by programming successive sections of it.

The working principle of the CY15B102Q-SXE is based on the use of high-speed current pulses, which interact with an oxide layer to charge and discharge the memory elements. This process is known as Fowler-Nordheim tunneling. The I2C/Quad SPI interface is used to write and read data from the memory array. The device is designed to store data in one or two small blocks of memory, called page buffers. The page buffers are used as temporary storage for writing and reading data from the memory array.

The CY15B102Q-SXE also offers other features such as multiple block protection, write and erase endurance, and a variety of functions for writing and reading data. The device also supports disk-on-chip (DOC) commands to enable a better integration of the Flash memory into an embedded system.

The CY15B102Q-SXE is a high-performance and reliable Flash memory device, suitable for a variety of applications in the automotive, industrial, and consumer markets. The device has a wide operating temperature range, fast programming speeds, and low power consumption. It is also easy to integrate with existing systems, due to its dual I2C/Quad SPI interface. The advanced features and performance of this product make it a perfect solution for any application that requires reliable nonvolatile memory.

The specific data is subject to PDF, and the above content is for reference

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