CY62128EV30LL-45ZXA Allicdata Electronics
Allicdata Part #:

CY62128EV30LL-45ZXA-ND

Manufacturer Part#:

CY62128EV30LL-45ZXA

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 1M PARALLEL 32TSOP I
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: CY62128EV30LL-45ZXA datasheetCY62128EV30LL-45ZXA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: MoBL®
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I
Base Part Number: CY62128
Description

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Memory products are essential components in electronic designs. The CY62128EV30LL-45ZXA is an 8Mbit non-volatile electrically erasable programmable read-only memory (EEPROM). This device is offered in low-power TSOP packages with a range of supply voltage options and a variety of access times.

The CY62128EV30LL-45ZXA is specifically designed for applications such as disk drives, mobile phones, and automotive systems. It features an industry-standard access resolution time of 150 ns, low-power consumption (30 mA typ. at 5 MHz), an active read current of 2 mA typ. and an active write current of 8 mA typ.

The CY62128EV30LL-45ZXA has 8 Mbits of non-volatile EEPROM organized as 2048 words of 32-bits. The device features a user facility that enables virtually undetectable write protection to the memory content in case the supply voltage is interrupted. The device also includes an additional unique facility that allows individual word write protection.

The Read/Write operations are performed by the system controller that supplies the necessary control signals. During Read operations, the Address and Chip Select (CE#) signals are provided by the system controller to select the location of the data. During Write operations, the WE# and OE# signals are also provided by the system controller.

The CY62128EV30LL-45ZXA is electrically erasable and thus can be programmed by the user without mechanical disruption of the memory package, making it ideal for applications where frequent reprogramming is required. The programming is accomplished by the application of 13.5V and the device can be programmed or erased in a matter of seconds.

The CY62128EV30LL-45ZXA is also designed with a proprietary low-power standby current circuit. This circuit enables a standby power consumption of 0.2mA max and a fast startup time. The device also features write protect, write enable, and read mode controls for greater security.

In summary, the CY62128EV30LL-45ZXA is a non-volatile electrically erasable and programmable memory device specifically designed for applications such as disk drives, mobile phones, and automotive systems. It includes an 8 Mbit of non-volatile EEPROM, an industry-standard access resolution time of 150 ns, low-power consumption (30 mA typ. at 5 MHz), an active read current of 2 mA typ. and an active write current of 8 mA typ, making it the ideal memory for applications requiring frequent reprogramming and maximum ease of use.

The specific data is subject to PDF, and the above content is for reference

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