CY62157EV30LL-45ZXIT

Series:	MoBL®
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	8Mb (512K x 16)
Write Cycle Time - Word, Page:	45ns
Access Time:	45ns
Memory Interface:	Parallel
Voltage - Supply:	2.2 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP I
Base Part Number:	CY62157

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Introduction to CY62157EV30LL-45ZXIT

CY62157EV30LL-45ZXIT is a low voltage static random access memory (SRAM) produced by Cypress Semiconductor. It is a high-performance 8K x 24-bit CMOS SRAM that enables an optimum balance between speed, power, and economy in space-limited applications. This SRAM includes high-speed 64K x 24 hardware-compatible asynchronous read and write functions.

Application Field

The CY62157EV30LL-45ZXIT is widely used in digital signal processing (DSP) related applications, medical imaging, and telecom infrastructure equipment. The low voltage, low power requirements of the CY62157EV30LL-45ZXIT make it well-suited for applications such as laptop and desktop PCs, instrumentation systems, printers, network routers, and embedded controllers.

Working Principle

CY62157EV30LL-45ZXITs are static random access memory (SRAM) devices. SRAMs are composed of two basic types of memories: Static memories and Dynamic memories. The major difference between these two types of memories is that static memories are non-volatile, meaning that their contents are retained even when power is removed. Dynamic memories, on the other hand, must be periodically refreshed in order to retain their contents.CY62157EV30LL-45ZXITs are memory devices that are designed to operate at low voltage logic levels (0.45 V). This enables the device to achieve high speed while consuming significantly less power than other devices operating at higher voltage levels. They employ static CMOS cells to store single bit data, wherein each cell is composed of four transistors and a single capacitor.Each cell in the CY62157EV30LL-45ZXIT is capable of providing asynchronous read and write functions. When reading, the cell\'s output is enabled and the data is fetched from the cell\'s static storage array. When writing, the cell\'s input is enabled and the data is loaded into the cell\'s static storage array.In addition to providing high-speed and low-power operation, the CY62157EV30LL-45ZXIT is also very reliable. It has been designed with built-in error correction and redundancy features for protecting against loss of data. Furthermore, the device also includes several other built-in features such as on-chip data qualification, write-enable strobe, and on-chip device ID.

Conclusion

The CY62157EV30LL-45ZXIT is a high-performance 8K x 24-bit static random access memory (SRAM) produced by Cypress Semiconductor. It is ideally suited for low power applications such as laptop and desktop PCs, instrumentation systems, and embedded controllers. The device is composed of a static CMOS cell array, which provides asynchronous read and write functions. Furthermore, the CY62157EV30LL-45ZXIT also includes several other features such as built-in error correction, redundancy protection, and on-chip device ID.

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