CY62146GE30-45BVXI Allicdata Electronics
Allicdata Part #:

CY62146GE30-45BVXI-ND

Manufacturer Part#:

CY62146GE30-45BVXI

Price: $ 4.81
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 4M PARALLEL 48VFBGA
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: CY62146GE30-45BVXI datasheetCY62146GE30-45BVXI Datasheet/PDF
Quantity: 445
1 +: $ 4.37220
10 +: $ 3.99105
25 +: $ 3.91507
50 +: $ 3.88823
100 +: $ 3.48793
480 +: $ 3.47454
960 +: $ 3.20401
1440 +: $ 3.11903
Stock 445Can Ship Immediately
$ 4.81
Specifications
Series: MoBL®
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory plays an essential role in electronic devices, providing a reliable and high-speed means of storing data. One type of memory technology that has become commonplace in modern applications is Static Random Access Memory (SRAM). CY62146GE30-45BVXI is one of the most popular SRAM ICs on the market today. It has a wide range of applications in various fields and is especially suited for use in embedded systems, medical devices, automotive systems, and consumer electronics.

CY62146GE30-45BVXI is an 8-bit SRAM IC with a maximum clock frequency of 45 MHz. It supports a wide range of operating voltages from 3V to 3.6V, making it suitable for use in many different types of applications. This IC features a burst read and write mode, allowing it to transfer data much faster than traditional RAM ICs.

CY62146GE30-45BVXI has a number of advantages over other types of SRAM ICs. Its ultra-low power consumption makes it ideal for applications with stringent power requirements. Its fast operating speed and low latency also make it a great choice for high speed data processing tasks. Additionally, it is rated at industrial temperature range, making it highly reliable in even the harshest environments.

The working principle of CY62146GE30-45BVXI is relatively simple. It uses a 6-transistor memory cell to store one bit of data. When data is written to the cell, two of the transistors are gated to store the desired logic level. When the write operation is complete, the memory cell\'s logic level is stored, and an appropriate enable line must be asserted to read the data from the memory cell.

CY62146GE30-45BVXI is a versatile SRAM IC that is well-suited for a variety of applications. Its burst read and write mode ensures high-speed data transfer, making it ideal for high-throughput system designs. The IC is also designed to use ultra-low power, making it perfect for battery-powered applications. In addition, its industrial temperature rating makes it highly reliable in the harshest of environments.

CY62146GE30-45BVXI is quickly becoming the SRAM IC of choice for many embedded system designers. Its versatile feature set and wide range of possible applications make it perfect for projects ranging from consumer electronics to medical devices. Its low power consumption, high performance, and excellent reliability make it a great choice for anyone looking for an SRAM IC with excellent capabilities.

The specific data is subject to PDF, and the above content is for reference

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