Allicdata Part #: | 428-4037-2-ND |
Manufacturer Part#: |
CY62146EV30LL-45BVXIT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 4M PARALLEL 48VFBGA |
More Detail: | SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para... |
DataSheet: | CY62146EV30LL-45BVXIT Datasheet/PDF |
Quantity: | 1000 |
Series: | MoBL® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 4Mb (256K x 16) |
Write Cycle Time - Word, Page: | 45ns |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.2 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-VFBGA |
Supplier Device Package: | 48-VFBGA (6x8) |
Base Part Number: | CY62146 |
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CY62146EV30LL-45BVXIT, part of the CY62148 family from Cypress Semiconductor Corporation, is one of the best performing SRAM products in the market. It has low power consumption and a wide operating voltage range making it suitable for a variety of applications. In addition, the CY62146EV30LL-45BVXIT features built-in error correction, power-down circuit, and the ability to support a wide variety of data widths.
The CY62146EV30LL-45BVXIT is classified as a memory device and is typically used to store small amounts of data. It is a type of static random access memory (SRAM) that consists of an integrated circuit and offers many benefits over dynamic random access memory (DRAM). These include higher speed, lower power consumption, and higher reliability.
A typical application of the CY62146EV30LL-45BVXIT is in embedded applications such as automotive, consumer electronics, and telecom systems. It is also commonly used in wireless applications such as Wi-Fi, Bluetooth, and Zigbee. The device is versatile and can also be used in storage applications and general-purpose computer memory applications.
The working principle of CY62146EV30LL-45BVXIT is based on two transistors and three resistors. It is referred to as a 6T SRAM cell, where the two transistors (T1 and T2) compose one bit and the three resistors (R1, R2, R3) form the current control. The two transistors are cross-coupled, and when the signals from the control lines (IN1, IN2) are applied, the stored bit value is either logic 0 or logic 1, depending on the signal combination.
When one transistor is on and the other is off, the SRAM cell stores a 0. Similarly, if the other transistor is on, then an SRAM cell stores a 1. The control line signals (IN1 and IN2) enable either the “0” or “1” transistor and those signals enable the appropriate bit to be stored in the cell.
In addition to this basic function, the CY62146EV30LL-45BVXIT offers many additional features to increase its functionality. These features include error correction, low power mode, soft error detection, wake-up detection, and more. These features enable the device to be used for a variety of applications.
In summary, the CY62146EV30LL-45BVXIT is a versatile memory device that offers high-performance, low-power consumption, and wide operating voltage range. It is well-suited for a variety of applications such as wireless, storage, and embedded systems. The device features built-in error correction, power-down circuits, soft error detection, and wake-up detections, making it suitable for even more applications.
The specific data is subject to PDF, and the above content is for reference
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