CY62147DV30L-55BVXE

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The CY62147DV30L-55BVXE is a high-performance 512Kx8 SRAM chip from Cypress Semiconductor Corporation. It is an advanced memory chip with ultra-low power consumption, fast access times and low-cost manufacturing. The device is an ideal choice for many embedded applications.

The CY62147DV30L-55BVXE is a part of Cypress Semiconductor\'s family of high-performance Static Random Access Memory (SRAM) products. It is designed using Double Data Rate (DDR) SRAM technology. The device provides access times as low as 55ns and runs at a voltage range of 1.8V to 3.6V. It also offers an extended temperature range of -40°C to +85°C. The device is qualified in lead-free, green or automotive versions, meeting various environmental and quality requirements.

This device comprises a 512K-bit SRAM array organized as 32K rows by 16 columns. The 16-bit devices feature a 3.0V CMOS input/output and a single-ended, continuous read/write protocol. The chip has a high-speed single-clock asynchronous page access mode and can be operated in a wide range of access times. It is also equipped with on-chip EDAC for error correction for low error-rate operation and supports advanced power management features such as standby and power-down modes.

The CY62147DV30L-55BVXE can be used in a wide range of memory applications. It provides an ideal data access solution for embedded systems and communications applications. The chip is used in system-on-chip design, video conferencing, digital video cameras, hard disk drives, PDAs and cellular telephones. It is also used in industrial control systems, set-top boxes, and embedded test and measurement equipment.

The CY62147DV30L-55BVXE is based on a synchronous SRAM structure. Its basic architecture consists of a RAM array, control logic, and input/output buffers. The control logic and input/output buffers control the access to the memory array and transfer data from the memory array to the I/O pins. Data is then transferred between the memory array and memory address registers, allowing the chip to be read and written. The access times for the device are determined by the clock frequency.

The CY62147DV30L-55BVXE provides flexible options for power saving. It has two power modes: standby and power-down. In standby mode, the core is in an idle state and only the input and output pads consume power. In power-down mode, the core is shut down while the output retains data. This device also offers various power-saving features, including partial array operations, asynchronous wake-up, and on-chip EDAC for low-error-rate operation.

The CY62147DV30L-55BVXE is an ideal choice for embedded applications that require fast access times and low-cost manufacturing. It is an advanced high-performance memory chip with low-power consumption, extended temperature range and on-chip EDAC for error correction. The device offers flexible options for power savings, asynchronous wake-up, partial array operations and a wide range of access times. All these features make the CY62147DV30L-55BVXE an ideal embedded memory solution.

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