CY62147G30-55BVXE Allicdata Electronics
Allicdata Part #:

CY62147G30-55BVXE-ND

Manufacturer Part#:

CY62147G30-55BVXE

Price: $ 5.22
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 4M PARALLEL
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: CY62147G30-55BVXE datasheetCY62147G30-55BVXE Datasheet/PDF
Quantity: 1000
480 +: $ 4.74856
Stock 1000Can Ship Immediately
$ 5.22
Specifications
Series: MoBL®
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)
Description

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CY62147G30-55BVXE is a static random-access memory (SRAM) integrated circuit that belongs to the family of MCUs (microcontroller units) used for various memory storage solutions. It is specifically designed to handle intensive data processing and memory storage applications due to its high-speed performance. The circuit contains a cluster of memory cells which can be addressed individually and operate together to provide a faster and more efficient way of data access and manipulation.

The main application of the CY62147G30-55BVXE is in the field of industrial automation, where it can be used for data storage and manipulation. This memory storage device is especially well-suited for automating complex processes and can easily handle large volumes of data. The performance and efficiency of the MCU can make the automation of complex tasks easier and more reliable.

The technology used in the CY62147G30-55BVXE utilizes a special memory addressing technique called “page addressing.” This technique uses a set of address pins and individual memory cells which are addressed separately. When a set of memory cells is addressed, all of the cells in that set are activated and data can be written or read from them. The data in these cells is stored in a specific order and the cells can be manipulated to various activities.

This technique provides several advantages that are not available in other memory storage devices. Memory cells can be addressed efficiently and with a single address cycle. This can be used to increase the speed at which data is accessed and processed. The SRAM is also capable of operating in a low power environment, making it ideal for industrial automation applications.

The CY62147G30-55BVXE operates at a high voltage range and can handle up to 55V. This makes it suited for high power applications such as motors, pumps and turbines. Along with this, the memory device is designed to handle wide temperature ranges, allowing it to operate correctly even in very harsh environments.

The CY62147G30-55BVXE is a powerful memory storage device that can help improve the efficiency of complex processes. Its ability to handle large volumes of data makes it ideal for industrial automation and its high power range capabilities give it the versatility to handle a wide variety of tasks. The MCU is highly reliable and is easily integrated with many different types of MCUs.

The specific data is subject to PDF, and the above content is for reference

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