CY62256L-70SNXCT

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CY62256L-70SNXCT is a 64K x 8 SRAM (Static Random Access Memory) device suitable for many applications. It has a fast access time of 70ns, low power consumption and a wide operating temperature range of -40°C to +85°C. The CY62256L-70SNXCT offers many features, including low active and standby power consumption, automatic power management, power-down control, and self refreshing capability. The memory is also available in a Surface Mount Technology (SMT) package for easy integration into various systems.

In terms of technology, the CY62256L-70SNXCT utilizes a pseudoStatic technology, or P-SRAM. P-SRAM uses a combination of DRAM and SRAM components to operate in a manner similar to SRAM but with the same power and speed advantages of DRAM. P-SRAM is becoming increasingly popular for embedded applications where low power consumption, fast access times and reliability are paramount.

In terms of application fields, the CY62256L-70SNXCT is ideal for many applications such as routers, access points, point of sale terminals, electronic voting systems, and industrial controllers. It is also an excellent choice for low-power critical data path and low power data storage applications. The device can also be used in applications requiring low latency such as network interface controllers and digital signal processors.

The CY62256L-70SNXCT works by storing data onto a series of 64K word-sized pages. When a page of data is accessed, the SRAM is converted into the form of an array of bit cells. Each cell stores one bit of data and multiple cells can be grouped together to form words and phrases. Data is read from the array by applying a voltage to the bit line, which causes the bit cell to become either charged (1) or uncharged (0): this process is known as sense/amplify/read. Data is written to the array by applying an opposite voltage to the bit line and determining which bit cells become charged and which remain unchanged.

The CY62256L-70SNXCT is an excellent choice for memory applications requiring fast access times, low power consumption, and a wide operating temperature range. Its P-SRAM technology provides the same speed and power advantages of SRAM while consuming less power than DRAM. The device is also available in a surface mount technology package for easy integration into various systems. Furthermore, it is well suited for low-power critical data path and low power data storage applications and can also be used in applications requiring low latency.

The specific data is subject to PDF, and the above content is for reference