CY62256L-70SNXIT

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The CY62256L-70SNXIT is a dynamic random-access memory (DRAM) integrated circuit (IC) with an access time of 70 nanoseconds. It is an ideal memory chip for applications where there is a need for high capacity and speed, such as in gaming and multimedia applications.

The CY62256L-70SNXIT consists of 256K x 8 bit in-line memory arrays, each of which consists of nine address lines (A0-A8), eight data lines (D0-D7), and two chip select lines, CE# 1 and CE#2.It is capable of 4-word page mode read and write operations with a read cycle time of 70ns.It is also equipped with Ready/Busy (RY/BY#) input, chip enable (CE#) , Output Enable (OE#) and write enable (WE#) outputs. It also has a write protect (WP#) pin which prevents inadvertent write operations.

The CY62256L-70SNXIT is commonly used in desktop PCs, laptops, digital and interactive televisions, network servers, digital cameras, audiophile recording systems and industrial automation applications.

The DRAM memory circuitry of the CY62256L-70SNXIT chip is organized into 2^9 words of 8-bit data. Each word can be accessed independently with no wait states. This type of organization is used to enable fast random-access times and increase page-mode access performance.

The CY62256L-70SNXIT also has a “High Speed SRAM-like” feature. This feature allows for faster access to the internal memory array by making certain internal circuits operate faster than those in a standard memory chip. This allows for higher performance in gaming and other comparable multimedia applications, as well as certain industrial applications.

The CY62256L-70SNXIT operates at a voltage of between 5V and its built-in active burst refresh controller refreshes only the rows that were accessed, conserving energy. It also has built-in power down and sleep modes, enabling it to consume very low power when not in active use. This makes it ideal for portable applications where battery power is critical.

The working principle of the CY62256L-70SNXIT is that the data is transferred to the internal memory array in parallel as 8-bits and is stored at the designated address. When the device is read, the data is transferred in parallel from the designated address to the output pins in 8-bit format. When written, the same flow is used in the reverse order, from the input pins to the designated address.

Overall, the CY62256L-70SNXIT is a high-capacity and high-speed DRAM chip with built-in features to ensure efficient use of power. Because of its features, it is ideal for applications that need high speed and capacity, such as gaming and multimedia. It is also suitable for portable applications due to its low power consumption.

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