Allicdata Part #: | D121N16BXPSA1-ND |
Manufacturer Part#: |
D121N16BXPSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE GEN PURP 1.6KV 230A |
More Detail: | Diode Standard 1600V 230A Stud Mount |
DataSheet: | D121N16BXPSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1600V |
Current - Average Rectified (Io): | 230A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 20mA @ 1600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Stud Mount |
Package / Case: | DO-205AA, DO-8, Stud |
Supplier Device Package: | -- |
Operating Temperature - Junction: | -40°C ~ 180°C |
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D121N16BXPSA1 is a diode rectifier that belongs to the single diode type. It consists of a single P-N junction and provides a precise reverse voltage protection for equipment. The D121N16BXPSA1 is a key component in power supply and protection circuits.
The D121N16BXPSA1 has a current rating of 125A and a maximum repetitive peak reverse voltage of 16V. It is available in an SOT-223 package with a typical junction capacitance of 0.08pF. Its blocking voltage is tested at a VRRM value of 19V. The junction-to-ambient thermal resistance (RJA) of the D121N16BXPSA1 is rated at 30°C. The maximum forward current (IFM) is 125A. Additionally, it exhibits low forward voltage drop with a typical value of 0.4V.
The D121N16BXPSA1 can be used in a number of applications. It is used as a rectifier diode in AC/DC power supplies, switching power supplies, and DC/DC converters. It is also used as protection diode in many electronic devices such as cell phones, laptop computers, and other electronic instrumentation. Additionally, it can be used as a rectifying element in brushless DC motors and voltage regulator applications.
The working principle of the D121N16BXPSA1 is based on the P-N junction diode. The P-N structure consists of two layers of heavily doped silicon which are connected to each other by a thin gold plating layer. When a voltage is applied to the diode, electrons and holes move in opposite directions. The holes move from the P-type region towards the N-type region and the electrons move from the N-type region to the P-type region. This creates a conductive path for current to flow, allowing the diode to operate as a rectifier.
When the voltage reaches the reverse breakdown voltage (VBR) of the diode, the current increases drastically and damages the diode. To protect the diode from this reverse voltage, the D121N16BXPSA1 has a maximum peak replicated reverse voltage rating of 16V. This ensures that the reverse breakdown voltage (VBR) is always below the 16V rating, thus preventing any damage to the component.
The D121N16BXPSA1 is a versatile diode that can be used in a number of applications. It can provide precise reverse voltage protection while maintaining a low forward voltage drop. It is a lightweight and highly reliable component that is suitable for a variety of power supply and protection applications.
The specific data is subject to PDF, and the above content is for reference
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