D44H11 Allicdata Electronics

D44H11 Discrete Semiconductor Products

Allicdata Part #:

497-2616-5-ND

Manufacturer Part#:

D44H11

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 80V 10A TO-220
More Detail: Bipolar (BJT) Transistor NPN 80V 10A 50W Through ...
DataSheet: D44H11 datasheetD44H11 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Power - Max: 50W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Description

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A D44H11 transistor, also known as a silicon NPN junction transistor (or BJT, for short), is an active, three-terminal device used for controlling and amplifying electrical current. It is a single-grade device and has been widely used in many applications, from switching to amplifying. This one is rated ambient temperature range from -55°C to +175°C, Collector Emitter Voltage (VCE) of 400V, and Collector Current (IC) of 5A. In terms of power dissipation, the Pd is 80W.

In respect to physical structure, a D44H11 BJT is made of two PN-junction that are formed by two materials of different impurity concentrations. The first one is relatively heavily doped P-type semiconductor, which forms the base region of the transistor. To its right is the emitter region which consists of an intrinsically low-doped N-type semiconductor material. Due to the oppositely charged doping in the base and emitter regions, there is an electric field created between them. On the transistor\'s left side there is the collector region, which consists of P-type doped silicon. To summarise the physical structure, we can say that the D44H11 has three layers, a P-N-P. The three regions of the transistor are connected by three metal electrodes, which are called the base (B), collector (C) and emitter (E).

Now that we know the physical characteristics of the D44H11, let us take a look at the working principle behind it. It primarily derives its name from the fact that it acts as an amplifier. This is because a small current present at its base can control a larger current through the collector and emitter region. This is achieved by the voltage difference between the base and emitter regions. When a small voltage (the base voltage) is applied between the base and emitter regions, the current present in the base is increased. This increased current causes current to flow through the collector-emitter path, thus producing an amplified output. To put it simply, the base voltage induces current in the base region, which is then amplified in the collector-emitter path.

As mentioned earlier, a D44H11 transistor is used in many applications, one of the more common ones being amplifiers. These come in various shapes and sizes, but the same principle is generally applicable. The most basic amplifier looks like this: an input signal is applied to the base of the transistor; then, current flows through the collector and emitter regions, thus resulting in an amplified output. Additionally, it can be used in switching operations and power conversion circuits.

Another popular use of the D44H11 transistor is in logic circuits, such as oscillators, logic gates and flip-flops. It can also be used to control the speed of motors. One common application of the transistor is in oscillators, which are circuits that produce periodic output signals. These oscillators generate a periodic signal from an input signal, and are used in many applications such as radio receivers, signal generators, and motor control systems.

The D4H11 transistor has many applications and is one of the most widely used transistors. Its small physical structure and easy to understand working principle has made it the perfect choice for many electronic circuitry applications. As a result, it can be found in many designs, ranging from automotive circuits to home electronics.

The specific data is subject to PDF, and the above content is for reference

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