Allicdata Part #: | D44H8GOS-ND |
Manufacturer Part#: |
D44H8G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 10A TO220AB |
More Detail: | Bipolar (BJT) Transistor NPN 60V 10A 50MHz 2W Thro... |
DataSheet: | D44H8G Datasheet/PDF |
Quantity: | 336 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 400mA, 8A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 4A, 1V |
Power - Max: | 2W |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | D44H |
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The D44H8G is a small signal NPN silicon transistor produced by Motorola. It is a single-transistor device, with a single emitter and a single collector. The gain of the transistor is typically in the range of 4 to 20, depending on the frequency of operation and the environmental factors. The maximum collector current for this transistor is 0.3mA and the maximum collector-emitter voltage is 40V.
The D44H8G can be used in many applications, from analog circuits to digital logic and even power circuits. In analog designs, this transistor can be used as a feedback amplifier, as an analog signal amplifier, or as a switch for triggering MOSFETs in digital applications. Other applications include pulse generator and frequency modulation circuits. This transistor can also be used in both linear and switched power supply circuits, as well as in switching audio applications.
The D44H8G is sensitive to ambient temperatures, and its parameters can change over time due to wear-out. However, its ability to drive large loads makes it an excellent choice for many applications and it can be operated at power levels up to 40W. The maximum collector-emitter voltage (Vce) of 40V allows the transistor to switch high voltage levels, and the low collector-emitter saturation voltage (Vce(sat)) makes it suitable for switching intensive loads.
The working principle of the D44H8G transistor is based on the flow of electrons between the emitter and the collector and through an internal base region. When a DC voltage is applied between the emitter and the base, electrons start flowing through the base. This creates a current through the collector, as part of the current flows into the base and the remaining part is sent to the collector. This current is amplified, as the collector current will be several times larger than the base current, depending on the transistor\'s gain.
The D44H8G transistor is fast and reliable, which makes it suitable for use in many applications. Due to its low saturation voltage, this transistor can be used for driving heavy loads, and its high frequency response makes it a good choice for high-speed switching and communication circuits. Furthermore, this transistor has a low noise level, which makes it suitable for audio technologies and noise-sensitive applications.
The specific data is subject to PDF, and the above content is for reference
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