D44H11FP

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	1V @ 400mA, 8A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 4A, 1V
Power - Max:	36W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The D44H11FP is a type of transistor known as a Bipolar Junction Transistor (BJT). It is a single transistor – one of three types of transistors – and is typically used for low-power applications.

What is a BJT?

A BJT is a type of transistor that uses current to amplify signals or switch electrical current between two points. It is composed of three layers, or regions, of semiconductors. These regions are called the Emitter, Base, and Collector. Each region has its own layer of doping, which is an impurity that can conduct current.BJTs are classified by the number of layers they have. BJT transistors are usually three-terminal devices – either NPN (negative-positive-negative) or PNP (positive-negative-positive) types.

Working Principle

The working principle of a BJT is based on the phenomenon of the flow of charge carriers. As the current in the base region increases, it draws increasing amounts of charge from the collector region, resulting in a current of charge carriers flowing from the collector to the emitter. This is known as “the current gain” of a BJT.The current gain of a BJT is affected by the forward and reverse current gain factors, as well as the base-emitter voltage. The forward current gain factor is the ratio of the collector current to the base current. The reverse current gain is the ratio of the base current to the collector current. The base-emitter voltage is an electromotive force (voltage) that develops across the base and emitter contact of the transistor due to the junction potentials.

Application Field

Due to its low current draw, the D44H11FP transistor is typically used in low-power applications such as switching, logic, and small signal amplification. A typical application for the D44H11FP is switching a transistor on and off in order to control current flow. The D44H11FP can also be used for logic – for example, it can be used to control the switching on and off of a light bulb or motor.The D44H11FP can also be used for small signals amplification. This type of transistor is especially useful for amplification of low-level signals, such as in audio and medical applications.

Conclusion

The D44H11FP is a type of Bipolar Junction Transistor (BJT) that is typically used for low-power applications such as switching, logic, and small signal amplification. The working principle of the D44H11FP is based on the phenomenon of the flow of charge carriers, and is affected by the forward and reverse current gain factors, as well as the base-emitter voltage. By understanding the working principle and application fields of the D44H11FP transistor, one can properly use it to develop electrical circuits.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description