Allicdata Part #: | DDTA114WUA-FDITR-ND |
Manufacturer Part#: |
DDTA114WUA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTA114WUA-7-F Datasheet/PDF |
Quantity: | 6000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 4.7 kOhms |
Base Part Number: | DDTA114 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 24 @ 10mA, 5V |
Series: | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTA114WUA-7-F is a high-performance single, pre-biased transistor for a wide range of general-purpose applications. This bipolar junction transistor (BJT) is a current-controlled three-terminal device. It is widely used as an amplifier or switch, and also finds use in a variety of other applications. In this article, we\'ll explore the application field and working principle of the DDTA114WUA-7-F.
Features and Application
The DDTA114WUA-7-F is a NPN transistor with a pre-bias designed to reduce thermal runaway that can cause failure in some systems. Its collector-emitter breakdown voltage (BVCE) rating of 40V is double that of many other transistors and prevents destruction due to high voltage. Its collector-emitter saturation voltage (VCE(sat)) of 0.2V allows it to be used in higher-efficiency applications.
The DDTA114WUA-7-F is ideally suited for use in power management applications, motor control, and switching, as well as general-purpose amplification. It is also highly suitable for use in audio power amplifiers and power supplies, since it can operate in a wide range of operating temperature from -65°C to 175°C.
Working Principle
Bipolar transistors, like the DDTA114WUA-7-F, consist of three terminals: the emitter, base, and collector. When the transistor is switched "on," current flows between the emitter and collector, while the base is connected to the emitter. This switched "on" state is known as "saturation," and is essential for the proper operation of the transistor. The base-emitter junction of the DDTA114WUA-7-F has a very high input impedance and provides amplification of the small base current, IB, which controls the larger collector-emitter current, IC. By varying the base current, IB, the DDTA114WUA-7-F can be used as an amplifier or a switch.
The DDTA114WUA-7-F also features a built-in protection against thermal runaway. This is thanks to its pre-bias, which limits the current to the transistor when switched "on." This greatly reduces the chance of the transistor failing due to excessive heat, ensuring longer life and more reliable operation.
Conclusion
In conclusion, the DDTA114WUA-7-F is a current-controlled three-terminal device that is widely used in a variety of application fields. It features a collector-emitter breakdown voltage rating of 40V, a collector-emitter saturation voltage of 0.2V, and a built-in protection against thermal runaway. It is suited to power management, motor control, switching, and audio power amplifier applications. Its high thermal resistance and exceptional power endurance make it an excellent choice for general-purpose amplification and a wide range of other uses.
The specific data is subject to PDF, and the above content is for reference
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