Allicdata Part #: | DDTA143XUA-FDITR-ND |
Manufacturer Part#: |
DDTA143XUA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTA143XUA-7-F Datasheet/PDF |
Quantity: | 9000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DDTA143 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Series: | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTA143XUA-7-F is a single, pre-biased, NPN transistor which is commonly used in telecom applications. It is suitable for RF switching, cellular base station power amplifiers, radio frequency amplifiers and a variety of other uses. This transistor can handle a maximum collector current of 5A and a maximum collector-emitter voltage of 25V. It is capable of withstanding high power levels and can operate at frequencies up to 3GHz.
The DDTA143XUA-7-F is a type of single junction device which is categorized as a bipolar junction transistor (BJT). A BJT is a semiconductor device composed of three terminals: the collector, the base, and the emitter. The current gain of the transistor depends on the base current, which is the current that passes through the base of the transistor. The base current controls the amount of current that flows through the collector and emitter.
The pre-biased feature of the DDTA143XUA-7-F transistor allows it to be used in applications that require a predetermined voltage across the collector and emitter. This bias voltage is predetermined by the amount of current flowing through the base of the transistor. By changing the amount of base current, the voltage across the collector and emitter can be fine-tuned.
The operating principle of the DDTA143XUA-7-F transistor is based on the movement of charge carriers called electrons. Electrons travel from the emitter to the collector through a region called the base. When a voltage is applied to the base of the transistor, it creates an electric field which causes electrons to flow through the base region. The amount of current that flows through the transistor is determined by the electric field, the resistance of the base region and the amount of current flowing through the base.
Once the current has been established, it flows from the collector to the emitter. This creates a voltage drop which causes the collector voltage to be lower than the emitter voltage. This voltage drop is referred to as the forward bias of the transistor. The DDTA143XUA-7-F has a pre-biased voltage, which is predetermined and cannot be adjusted.
In summary, the DDTA143XUA-7-F transistor is an NPN type of single, pre-biased BJT. It is capable of handling up to 5A of collector current and 25V of collector-emitter voltage. The operating principle of the transistor is based on the movement of electrons, which are attracted by the electric field of the base. The pre-biased voltage is predetermined, allowing this transistor to be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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