DDTA113ZUA-7-F Discrete Semiconductor Products |
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Allicdata Part #: | DDTA113ZUA-FDITR-ND |
Manufacturer Part#: |
DDTA113ZUA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTA113ZUA-7-F Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 10mA, 5V |
Base Part Number: | DDTA113 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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What Is the DDTA113ZUA-7-F?
The DDTA113ZUA-7-F, manufactured by Panasonic, is a single-type bipolar junction transistor (BJT). It is specifically designed for use in pre-biased applications. BJTs are widely used in both digital and analog circuits, even though they have been largely supplanted by field effect transistors (FETs) due to their higher switching speeds and lower on-state voltage drops.
Application Field
The DDTA113ZUA-7-F is most commonly used as a general purpose amplifier, often in telecommunication devices such as oscillators, modulators, and demodulators. The pre-biased nature of the transistor makes it particularly advantageous in applications where a voltage source is already present. This can drastically reduce the complexity of the circuitry required and, as such, is an ideal option for use in mobile and handheld devices. Additionally, due to its relatively low collector-emitter saturation voltage, the DDTA113ZUA-7-F is often utilized as an audio amplifying device.
Working Principle
A BJT consists of two PN junction diodes connected back-to-back in an arrangement called the “bipolar architecture”. This means that there is both N and P type semiconductor material in the same device. When a voltage is applied to the base of the BJT, the electrons and holes are both injected into the junction, creating a virtual “current” within the device. This current, known as the base current, “controls” the current that flows between the other two terminals, the collector and emitter, of the BJT. This current is known as the collector current. By properly controlling the base current, the collector current can be adjusted, creating an amplifier. In pre-biased applications, a voltage source is connected directly to the collector and emitter terminals of the BJT. This voltage source creates a voltage difference between the two junctions, allowing for current to be controlled more accurately and for lower saturation voltages to be achieved.
Conclusion
The DDTA113ZUA-7-F is a single-type bipolar junction transistor that is well suited for use in pre-biased applications. The pre-biased architecture of the transistor allows for improved amplifier performance in comparison to other BJTs, making it ideal for use in mobile and handheld devices. Additionally, it has a relatively low collector-emitter saturation voltage, making it a suitable choice for audio amplification applications.
The specific data is subject to PDF, and the above content is for reference
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DDTA123ECA-7-F | Diodes Incor... | -- | 3405 | TRANS PREBIAS PNP 200MW S... |
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DDTA143XUA-7-F | Diodes Incor... | -- | 9000 | TRANS PREBIAS PNP 200MW S... |
DDTA124EUA-7-F | Diodes Incor... | -- | 3000 | TRANS PREBIAS PNP 200MW S... |
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