DDTA115TUA-7-F

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DDTA115TUA-7-F is a type of single pre-biased bipolar transistor (BJT). This means that it is designed to provide a certain level of current through a load without additional voltage or current being applied by the user. It is a small-signal BJT with a low current rating of 15 mA, and a low collector-emitter voltage rating of 60V. It is designed to function as a low frequency amplifier in a variety of applications, such as cellular phones, pagers, wireless communication systems, and other similar handheld devices.

The DDTA115TUA-7-F is manufactured with a more advanced process that results in better performance than earlier BJTs. It features an integrated base to help eliminate the need for an extra transistor. The build also features a built-in cluster of transistors that provides an increased gain. This makes the DDTA115TUA-7-F more efficient than uni-polar devices and better suited for applications where small signal currents are needed.

The DDTA115TUA-7-F works by creating a transistor action when a small current flows through the base of the device. This causes the collector-emitter voltage to rise, creating an amplified signal. This amplification of the signal is the result of the current from the base driving the transistor\'s collector-emitter region. Due to the extremely low current rating and base-emitter voltage of the DDTA115TUA-7-F, the collector-emitter current produced is much lower than that of a uni-polar device. This makes the DDTA115TUA-7-F a great choice for applications that require low power or super low power (sleep) currents.

This low operating power also makes the DDTA115TUA-7-F well suited for use in high frequency applications, such as radio frequency (RF) circuits. The low current rating and low voltage also make this device suitable for use in low noise amplifier circuits. The built-in emitter resistor also helps reduce thermal stress in high frequency applications.

The DDTA115TUA-7-F\'s low voltage and current ratings make it ideal for applications that require longer life and operating temperatures. The device can operate up to 150°C, making it the perfect choice for high temperature environments. Additionally, the DDTA115TUA-7-F is pre-biased, so the user does not need to apply any additional voltage or current to the device in order to get a desired level of current through a load. This makes it ideal for use in applications that require low current but need long life operation.

Overall, the DDTA115TUA-7-F is a great choice for applications that require low power, low noise operation and reliability. This single pre-biased bipolar transistor is suitable for a variety of applications, such as cellular phones, pagers, wireless communication systems, and other similar handheld devices. Thanks to its integrated base and lower collector-emitter voltage rating, this BJT is more efficient than many uni-polar devices, making it ideal for applications where small signal currents are needed. Moreover, it also has a long operating life and high temperature operation, making it a great choice for applications that require longer life and operating temperatures.

The specific data is subject to PDF, and the above content is for reference