Allicdata Part #: | DF1000R17IE4BOSA1-ND |
Manufacturer Part#: |
DF1000R17IE4BOSA1 |
Price: | $ 381.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1700V 1000A |
More Detail: | IGBT Module Single 1700V 6250W Chassis Mount Mod... |
DataSheet: | DF1000R17IE4BOSA1 Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 347.06100 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Power - Max: | 6250W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 1000A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 81nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
DF1000R17IE4BOSA1 modules are a type of insulated gate bipolar transistor (IGBT) designed for use in industrial applications. This module is designed to provide high-power output, low stray inductance and high efficiency in a robust package. The device is capable of operating with a wide range of output waveforms up to a maximum frequency of 1.1 MHz.
The DF1000R17IE4BOSA1 is specifically designed for applications where high-power, low stray inductance, and long-term reliability are required. These modules are typically used in motor control systems, traction drives, servo drives and switch mode power supplies.
The module consists of two IGBT junctions, each consisting of a positive-conductive heat spreader, a parasitic p-npn structure, and two isolated gate drivers. The two junctions, each equipped with its own gate driver, are connected in parallel, thus providing high power capability and a low stray inductance. The built-in snubber capacitor provides a low on-state and gate capacitance, resulting in fast switching performance and improved power efficiency.
The operating voltage for the device ranges from 7 V to 17 V and the maximum power output is 1 kW. The maximum switching frequency is 1.5 MHz. The breakdown voltage (the voltage at which the internal components become permanently damaged) is rated at 1800 V.
In order to operate the module, a DC voltage is applied to the gate terminals, which causes the IGBT junctions to turn on. This in turn causes a current to flow through the device, powering the load connected to the device. The on-state power losses are low, leading to high efficiency. In addition, the gate driver provides built-in protection against over-current, over-voltage and short-circuit conditions.
The DF1000R17IE4BOSA1 module is ideal for use in motor control systems, traction drives, servo drives and switch mode power supplies where high-power, low stray inductance, and long-term reliability are required. It is a reliable, efficient and robust component that can be used to power a wide range of devices and applications.
The specific data is subject to PDF, and the above content is for reference
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