| Allicdata Part #: | DF1000R17IE4BOSA1-ND |
| Manufacturer Part#: |
DF1000R17IE4BOSA1 |
| Price: | $ 381.77 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT MODULE 1700V 1000A |
| More Detail: | IGBT Module Single 1700V 6250W Chassis Mount Mod... |
| DataSheet: | DF1000R17IE4BOSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 2 +: | $ 347.06100 |
| Series: | -- |
| Part Status: | Active |
| IGBT Type: | -- |
| Configuration: | Single |
| Voltage - Collector Emitter Breakdown (Max): | 1700V |
| Power - Max: | 6250W |
| Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 1000A |
| Current - Collector Cutoff (Max): | 5mA |
| Input Capacitance (Cies) @ Vce: | 81nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | Yes |
| Operating Temperature: | -40°C ~ 150°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | Module |
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DF1000R17IE4BOSA1 modules are a type of insulated gate bipolar transistor (IGBT) designed for use in industrial applications. This module is designed to provide high-power output, low stray inductance and high efficiency in a robust package. The device is capable of operating with a wide range of output waveforms up to a maximum frequency of 1.1 MHz.
The DF1000R17IE4BOSA1 is specifically designed for applications where high-power, low stray inductance, and long-term reliability are required. These modules are typically used in motor control systems, traction drives, servo drives and switch mode power supplies.
The module consists of two IGBT junctions, each consisting of a positive-conductive heat spreader, a parasitic p-npn structure, and two isolated gate drivers. The two junctions, each equipped with its own gate driver, are connected in parallel, thus providing high power capability and a low stray inductance. The built-in snubber capacitor provides a low on-state and gate capacitance, resulting in fast switching performance and improved power efficiency.
The operating voltage for the device ranges from 7 V to 17 V and the maximum power output is 1 kW. The maximum switching frequency is 1.5 MHz. The breakdown voltage (the voltage at which the internal components become permanently damaged) is rated at 1800 V.
In order to operate the module, a DC voltage is applied to the gate terminals, which causes the IGBT junctions to turn on. This in turn causes a current to flow through the device, powering the load connected to the device. The on-state power losses are low, leading to high efficiency. In addition, the gate driver provides built-in protection against over-current, over-voltage and short-circuit conditions.
The DF1000R17IE4BOSA1 module is ideal for use in motor control systems, traction drives, servo drives and switch mode power supplies where high-power, low stray inductance, and long-term reliability are required. It is a reliable, efficient and robust component that can be used to power a wide range of devices and applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| DF10G5M4N,LF | Toshiba Semi... | 0.08 $ | 6000 | TVS DIODE 3.6V 24V 10DFN |
| DF10SA-E3/77 | Vishay Semic... | -- | 1000 | DIODE GPP 1A 1000V 4SMDBr... |
| DF1000R17IE4BOSA1 | Infineon Tec... | 381.77 $ | 1000 | IGBT MODULE 1700V 1000AIG... |
| DF10SA-E3/45 | Vishay Semic... | 0.47 $ | 1000 | DIODE GPP 1A 1000V 4SMDBr... |
| DF10S | ON Semicondu... | -- | 54000 | IC RECT BRIDGE 1000V 1.5A... |
| DF10S_F065 | ON Semicondu... | 0.0 $ | 1000 | IC DIODE BRIDGE 1000V 1.5... |
| DF10-29S-2DSA(62) | Hirose Elect... | 0.0 $ | 1000 | CONN 29PIN THRU HOLE29 Po... |
| DF10S-T | Diodes Incor... | -- | 147000 | RECT BRIDGE GPP 1A 1000V ... |
| DF10-26S-2DSA(62) | Hirose Elect... | 0.0 $ | 1000 | CONN 26PIN THRU HOLE26 Po... |
| DF10S-G | Comchip Tech... | 0.4 $ | 1000 | RECT BRIDGE GPP 1000V 1A ... |
| E69-DF10 10M | Omron Automa... | 0.0 $ | 1000 | 10M EXT.CABLE |
| DF10S2 | ON Semicondu... | 0.18 $ | 1500 | DIODE BRIDGE 1000V 2A SDI... |
| DF10M | Diodes Incor... | -- | 7491 | RECT BRIDGE GPP 1000V 1A ... |
| DF10G7M1N,LF | Toshiba Semi... | 0.11 $ | 3000 | TVS DIODE 5V 12V 10DFN |
| DF10ST-G | Comchip Tech... | 0.12 $ | 1000 | RECTIFIER BRIDGE 1.0A 100... |
| DF10M/45 | Vishay Semic... | 0.0 $ | 1000 | RECTIFIER BRIDGE 1.0A 100... |
| DF10-31S-2DSA(78) | Hirose Elect... | 2.14 $ | 1000 | CONN 31 PIN FEMALE STRAIG... |
| DF10-31S-2DSA(62) | Hirose Elect... | -- | 1000 | CONNECTOR 31 PIN FEMALE S... |
| DF10G6M4N,LF | Toshiba Semi... | 0.08 $ | 1000 | TVS DIODE 5.5V 25V 10DFN |
| DF10-26S-2DSA(72) | Hirose Elect... | 1.74 $ | 1000 | CONN 26 PIN FEMALE STRAIG... |
| DF100R07W1H5FPB53BPSA2 | Infineon Tec... | 33.89 $ | 1000 | MOD DIODE BRIDGE EASY1B-2... |
| DF1000R17IE4DB2BOSA1 | Infineon Tec... | 426.36 $ | 1000 | IGBT MODULE 1700V 1000AIG... |
| HR-DF10 | FDK America,... | 0.0 $ | 1000 | BATT PACK 12.0V D 6500MAH... |
| DF10M-E3/45 | Vishay Semic... | -- | 6802 | DIODE GPP 1A 1000V 4DIPBr... |
| DF10S-E3/77 | Vishay Semic... | -- | 1000 | DIODE GPP 1A 1000V 4SMDBr... |
| DF10S/27 | Vishay Semic... | -- | 1000 | RECTIFIER BRIDGE 1A 1000V... |
| DF100R07W1H5FPB54BPSA2 | Infineon Tec... | 34.65 $ | 1000 | LOW POWER EASYIGBT Module... |
| SDF DF100S | Cantherm | 0.77 $ | 15928 | TCO 250VAC 10A 100C(212F)... |
| DF10MA-E3/45 | Vishay Semic... | -- | 1000 | DIODE GPP 1A 1000V 4DIPBr... |
| DF10S-E3/45 | Vishay Semic... | -- | 1000 | DIODE GPP 1A 1000V 4SMDBr... |
| SDF DF104S | Cantherm | 0.77 $ | 10325 | TCO 250VAC 10A 104C(219F)... |
| DF10-31S-2DSA(72) | Hirose Elect... | 1.86 $ | 1000 | CONN 31 PIN FEMALE STRAIG... |
| DF10S1 | ON Semicondu... | 0.13 $ | 10500 | BRIDGE RECT 1A 1KV 4SDIPB... |
| DF10-G | Comchip Tech... | 0.34 $ | 5643 | RECT BRIDGE GPP 1000V 1A ... |
| DF10-31S-2DSA(59) | Hirose Elect... | 0.0 $ | 1000 | CONNECTOR 31 PIN FEMALE S... |
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DF1000R17IE4BOSA1 Datasheet/PDF