Allicdata Part #: | DF1000R17IE4DB2BOSA1-ND |
Manufacturer Part#: |
DF1000R17IE4DB2BOSA1 |
Price: | $ 426.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1700V 1000A |
More Detail: | IGBT Module Single 1700V 6250W Chassis Mount Mod... |
DataSheet: | DF1000R17IE4DB2BOSA1 Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 387.59100 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Power - Max: | 6250W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 1000A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 81nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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DF1000R17IE4DB2BOSA1 Application Field and Working Principle
The DF1000R17IE4DB2BOSA1 module is a wide band gap IGBT gate driver module designed to provide high performance gate drive solutions for next-generation wide band IGBTs. The DF1000R17IE4DB2BOSA1 is a modular IGBT driver module designed to provide high performance solutions for gate driving wide bandgap IGBTs. The device supports a wide range of IGBT types, including low voltage, medium voltage, and high voltage rated IGBTs.
The DF1000R17IE4DB2BOSA1 is designed to drive IGBTs with a working voltage of up to 17V. The gate driver module is capable of providing a gate turn on and off current rating of up to 1000A, with a low noise operation. The module also features a 5-level suppression circuit that is capable of suppressing noise induced voltage transients. The module also features an integrated reset circuit to ensure safe shutdown of the IGBT in case of power supply failure. Additionally, the module includes a current steering logic that provides for simultaneous conduction of all IGBTs on the same input signal.
The DF1000R17IE4DB2BOSA1 offers excellent dynamic performance and fast switching times. It is designed to provide fast turn-on and turn-off times and low voltage overshoots. The module also offers high-level EMI protection, and a wide range of timing flexibility, enabling the user to accurately control the IGBT rise and fall times.
The module features protection features such as overvoltage, overcurrent and undervoltage protection. The module is also built with a reliable thermal management system, which is designed to prevent the device from overheating. The module also features a self-test circuit, which tests the module\'s operation and will alert the user if the module is not functioning correctly.
The DF1000R17IE4DB2BOSA1 is suitable for applications such as power switching, motor control, and high power UPS systems. The module can be used to replace older IGBT module designs, as well as being used in new applications requiring high power capability.
In summary, the DF1000R17IE4DB2BOSA1 is a high performance and cost-effective IGBT gate driver module capable of providing fast switching times, high power capability, and excellent protection features. It is designed to provide a reliable solution for high power applications, such as power switching and motor control.
The specific data is subject to PDF, and the above content is for reference
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