DF10G5M4N,LF Circuit Protection |
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Allicdata Part #: | DF10G5M4NLFTR-ND |
Manufacturer Part#: |
DF10G5M4N,LF |
Price: | $ 0.08 |
Product Category: | Circuit Protection |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TVS DIODE 3.6V 24V 10DFN |
More Detail: | N/A |
DataSheet: | DF10G5M4N,LF Datasheet/PDF |
Quantity: | 6000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.07641 |
6000 +: | $ 0.07178 |
15000 +: | $ 0.06715 |
30000 +: | $ 0.06174 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Bidirectional Channels: | 4 |
Voltage - Reverse Standoff (Typ): | 3.6V (Max) |
Voltage - Breakdown (Min): | 4V |
Voltage - Clamping (Max) @ Ipp: | 24V |
Current - Peak Pulse (10/1000µs): | 2A (8/20µs) |
Power - Peak Pulse: | 30W |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | 0.2pF @ 1MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 10-UFDFN |
Supplier Device Package: | 10-DFN (2.5x1) |
Description
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DF10G5M4N,LF Application Field and Working Principle
TVS (Transient Voltage Suppression) diodes are an important type of semiconductor component, widely used in electronic systems for protecting against transient electrical disturbances such as electrostatic discharge, voltage spikes, and surge currents. DF10G5M4N,LF is a TVS diode specifically designed to provide reliable protection for automotive and industrial applications.Application Field
DF10G5M4N,LF diodes are particularly suited for protecting general automotive applications including in-car audio systems, engines and lighting systems. It can also be used in industrial applications such as industrial automation, power electronics, communication systems, and many more.Structure
DF10G5M4N,LF diodes are typically constructed in a standard DO-35 (axial leaded) package. This package measures 3.4 mm by 6.6 mm, with leads spaced at 3.3 mm. The body of the diode is made of silicon with a hermetically sealed glass covering and a metal cap.Working Principle
DF10G5M4N,LF diodes are designed to provide fast-acting protection against overvoltage conditions. When an overvoltage occurs, these diodes become forward-biased, allowing current to flow from the anode (positive) terminal of the diode to the cathode (negative) terminal. This action effectively dissipates such overvoltage by reducing its amplitude and allowing the attached component or circuit to be protected from excessive voltage.Features and Benefits
DF10G5M4N,LF diodes provide a number of important features and advantages. One key feature is its low number of transientgates, which is important in providing reliable protection against high pulses associated with transient overvoltage events. It also features a very low clamping voltage at 150 V for a 5 A pulse, providing effective protection without limiting current flow. In addition, DF10G5M4N,LF diodes have a small reverse leakage current, helping reduce power consumption. Finally, DF10G5M4N,LF diodes achieve a high peak pulse power of 500 Watts. This provides dynamic protection against plug-in events.Conclusion
DF10G5M4N,LF is a valuable type of transient voltage suppression diode, ideally suited for protecting automotive and industrial applications from transient overvoltage events. It offers a number of attractive features, such as low number of transientgates, low clamping voltage, low reverse leakage current, and high peak pulse power. For this reason, it is an effective and reliable solution for protecting electronic systems from overvoltage damage.The specific data is subject to PDF, and the above content is for reference
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