DF10G5M4N,LF Allicdata Electronics

DF10G5M4N,LF Circuit Protection

Allicdata Part #:

DF10G5M4NLFTR-ND

Manufacturer Part#:

DF10G5M4N,LF

Price: $ 0.08
Product Category:

Circuit Protection

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TVS DIODE 3.6V 24V 10DFN
More Detail: N/A
DataSheet: DF10G5M4N,LF datasheetDF10G5M4N,LF Datasheet/PDF
Quantity: 6000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.07641
6000 +: $ 0.07178
15000 +: $ 0.06715
30000 +: $ 0.06174
Stock 6000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Type: Zener
Bidirectional Channels: 4
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Power - Peak Pulse: 30W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: 10-UFDFN
Supplier Device Package: 10-DFN (2.5x1)
Description

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DF10G5M4N,LF Application Field and Working Principle

TVS (Transient Voltage Suppression) diodes are an important type of semiconductor component, widely used in electronic systems for protecting against transient electrical disturbances such as electrostatic discharge, voltage spikes, and surge currents. DF10G5M4N,LF is a TVS diode specifically designed to provide reliable protection for automotive and industrial applications.

Application Field

DF10G5M4N,LF diodes are particularly suited for protecting general automotive applications including in-car audio systems, engines and lighting systems. It can also be used in industrial applications such as industrial automation, power electronics, communication systems, and many more.

Structure

DF10G5M4N,LF diodes are typically constructed in a standard DO-35 (axial leaded) package. This package measures 3.4 mm by 6.6 mm, with leads spaced at 3.3 mm. The body of the diode is made of silicon with a hermetically sealed glass covering and a metal cap.

Working Principle

DF10G5M4N,LF diodes are designed to provide fast-acting protection against overvoltage conditions. When an overvoltage occurs, these diodes become forward-biased, allowing current to flow from the anode (positive) terminal of the diode to the cathode (negative) terminal. This action effectively dissipates such overvoltage by reducing its amplitude and allowing the attached component or circuit to be protected from excessive voltage.

Features and Benefits

DF10G5M4N,LF diodes provide a number of important features and advantages. One key feature is its low number of transientgates, which is important in providing reliable protection against high pulses associated with transient overvoltage events. It also features a very low clamping voltage at 150 V for a 5 A pulse, providing effective protection without limiting current flow. In addition, DF10G5M4N,LF diodes have a small reverse leakage current, helping reduce power consumption. Finally, DF10G5M4N,LF diodes achieve a high peak pulse power of 500 Watts. This provides dynamic protection against plug-in events.

Conclusion

DF10G5M4N,LF is a valuable type of transient voltage suppression diode, ideally suited for protecting automotive and industrial applications from transient overvoltage events. It offers a number of attractive features, such as low number of transientgates, low clamping voltage, low reverse leakage current, and high peak pulse power. For this reason, it is an effective and reliable solution for protecting electronic systems from overvoltage damage.

The specific data is subject to PDF, and the above content is for reference

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