DF11MR12W1M1B11BOMA1

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DF11MR12W1M1B11BOMA1 Application Field and Working Principle

The DF11MR12W1M1B11BOMA1 is a Power MOSFET array manufactured by Fujitsu Electronics. The model is part of the DF11 series, and is composed of four N/P channel Dual D-MOSFETs with an integrated high-side switch for load current up to 2A continuous.

Since this device is composed by MOSFET transistors, working principles common to all MOSFETs apply to the DF11MR12W1M1B11BOMA1. In short, a MOSFET is a field-effect transistor which conducts by controlling the amount of doping in the semiconductor channel. The voltage difference between the source, drain and gate determines the resistance in the channel, controlling the current flow through it.

The main application fields for the DF11MR12W1M1B11BOMA1 are in inverters, motor drives, AC motor and lighting controls, power factor control circuits, and many other power electronics applications requiring high speed switching. It is especially well suited for switching in applications with high current loads and high power dissipation.

Integrated High Side Switch

This device is equipped with an integrated high-side switch for controlling current in the load area. This switch allows full control of the load current, which allows for more efficient operation and better overall system performance. The high-side switch operation needs a combination of two voltages, one that is positive and one that is negative. These two voltages are connected to the Drain and Source of the P-type MOSFET respectively and the Gate voltage is supplied from the amplifier.

High-Speed Switching

The DF11MR12W1M1B11BOMA1 device is designed to ensure high-speed switching. The internal circuitry is optimized for excellent switching characteristics, including high turn-on, turn-off the speed, excellent switching noise performance, and low static consumption. This device is also capable of operating at temperatures up to 150C and with a maximum power dissipation of 1.2W.

Internal Structure

The device is internally composed of two individual P-type MOSFETs and two N-type MOSFETs. The two P-type transistors form a common source circuit, and the two N-type transistors form a common drain circuit. The resistance between the two circuits is controlled by the voltage applied to the gate nodes. The Voltage will be greater than a certain threshold, which will cause a decrease in the resistance and an increase in the current flow.

Protection Circuits

Due to the high power dissipation of the DF11MR12W1M1B11BOMA1, it is also equipped with protection circuits that are designed to prevent overvoltage and overtemperature conditions from damaging the device. The device contains a built-in over-temperature monitoring circuit that will shut the device off if it exceeds a certain temperature. It also contains an overvoltage protection circuit that will shut off the device if the voltage applied to it is too high.

Conclusion

The Fujitsu Electronics DF11MR12W1M1B11BOMA1 is an optimized power MOSFET array composed of two N/P-channel MOSFETs, it is well suited for switching in applications with high current loads and power dissipation. It also has a high-side switch for controlling the load current and excellent switching characteristics, making it a good option for inverters, motor drives, AC motor, and lighting control circuits.

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