DG2721DN-T1-E4

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DG2721DN-T1-E4 Application Field and Working Principle

The DG2721DN-T1-E4 is a sophisticated, high-speed, low-offset, 16-channel analog switch utilizing complementary MOS technology. It is designed for precision applications such as multi-channel signal multiplexing and signal routing. With low insertion loss and offset voltage, excellent signal isolation and flat signal response, the DG2721DN-T1-E4 is ideal for applications where precision switching or routing of multiple signal signals is necessary.

The DG2721DN-T1-E4 is designed to switch 16 channels of analog signals. Each of the 16 channels are individually adjustable allowing for precision signal routing. With its ultra-low offset voltage, the DG2721DN-T1-E4 has the capability to switch signals of up to 3.6V and 5V without compromising signal integrity, making it suitable for both low-voltage and high-voltage applications. The device also includes a built-in temperature compensation function, allowing for stable performance in a wide range of temperatures.

The DG2721DN-T1-E4\'s primary application field is precision signal multiplexing, routing, switching and conversion. The device is widely used in such fields as electronic instrumentation, automotive, consumer electronics, professional audio, and medical systems. The device is also designed to be used with a wide variety of analog signals, including audio, video, power control and RF signals.

The working principle of the DG2721DN-T1-E4 is based on the internal structure of the device. The switching unit consists of two MOSFETs - an N-channel and a P-channel. When the control inputs are low, the N-channel MOSFET is off and the P-channel MOSFET is on. In this state, the input and output terminals are connected directly by the P-channel MOSFET, and the N-channel MOSFET is floating. When the control inputs are high, the N-channel MOSFET is turned on and the P-channel is off. In this state, the input and output terminals are connected by the N-channel MOSFET, with the P-channel MOSFET providing a low on-resistance path between the two.

The capacitance associated with the on-state between the two MOSFETs is also minimized by the use of a thinner gate oxide, which gives the DG2721DN-T1-E4 a fast switching time of 0.7ns (Typ.). The low impedance of the device also minimizes signal reflections across the device, allowing for clean and reliable signals.

The DG2721DN-T1-E4 utilizes complementary MOS technology to provide an enhanced level of flexibility and performance, making it an ideal choice for both low and high-voltage precision signal routing applications. With its low insertion loss and offset voltage, excellent signal isolation, and ultra-low switching time, it is an excellent choice for applications requiring precision multiplexing and routing of multiple analog signals.

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