Allicdata Part #: | DMC1017UPD-13DITR-ND |
Manufacturer Part#: |
DMC1017UPD-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 12V 9.5A/6.9A SMD |
More Detail: | Mosfet Array N and P-Channel 12V 9.5A, 6.9A 2.3W S... |
DataSheet: | DMC1017UPD-13 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Base Part Number: | DMC1017UPD |
Supplier Device Package: | PowerDI5060-8 |
Package / Case: | 8-PowerTDFN |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2.3W |
Input Capacitance (Ciss) (Max) @ Vds: | 1787pF @ 6V |
Gate Charge (Qg) (Max) @ Vgs: | 35.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 11.8A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A, 6.9A |
Drain to Source Voltage (Vdss): | 12V |
FET Feature: | Standard |
FET Type: | N and P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The DMC1017UPD-13 is a Field Effect Transistor (FET) array used in a variety of electronic applications. It is a low-power FET array that provides for higher performance levels in transceiver designs, where performance levels are limited by current consumption.
The DMC1017UPD-13 consists of sixteen N-channel depletion mode FETs placed together in one package. Each FET is separately addressable, providing the user with the flexibility to connect them in any configuration desired. The sixteen FETs in the array are arranged so that they can be used as four independent 2-input and 2-output FET arrays, or eight independent FETs. These configurations enable the user to create a wide variety of circuits with the DMC1017UPD-13.
The depletion mode FETs used in the DMC1017UPD-13 are optimized to reduce power consumption while still providing high performance switching characteristics. The threshold voltage of the FETs is consistent from part to part and from operation to operation, providing the user with consistent operation and reliable results. The FETs also have a low leakage current when not in use which ensures low power consumption. In addition, the FETs in the DMC1017UPD-13 are configured to minimize the switching noise associated with their operation.
The working principle of the DMC1017UPD-13 is simple. The FETs are addressed individually and when a voltage is applied to the gate of one of the FETs, the current will flow through the FET from the drain to the source. The amount of current flowing through the FET is determined by the magnitude of the voltage applied to the gate. This allows the user to control the amount of current flowing through the FET and as a result, control the output of the circuit. By connecting the FETs in different configurations, it is possible to create a variety of different circuits and systems.
The DMC1017UPD-13 is well-suited for a variety of applications, including switching circuits, power supplies, signal conditioning, and similar types of circuits. It is particularly useful in transceiver designs, as the low power consumption and consistent performance of the FETs allows for increased efficiency and performance levels. The DMC1017UPD-13 is also a good choice for designs where space is limited, as the FETs are all placed within one package.
In summary, the DMC1017UPD-13 is a high-performance, low-power FET array that provides for increased performance levels in transceiver designs. It is well-suited for a variety of applications and is particularly useful in transceiver designs. The sixteen FETs in the array are optimally configured to reduce power consumption while still providing high-performance switching characteristics.
The specific data is subject to PDF, and the above content is for reference
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