Allicdata Part #: | DME201010RTR-ND |
Manufacturer Part#: |
DME201010R |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN/PNP 50V 0.1A MINI5 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP (Emitter C... |
DataSheet: | DME201010R Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.06680 |
6000 +: | $ 0.06275 |
15000 +: | $ 0.05870 |
30000 +: | $ 0.05398 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN, PNP (Emitter Coupled) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 210 @ 2mA, 10V |
Power - Max: | 300mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | Mini5-G3-B |
Base Part Number: | DME20101 |
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DME201010R is an integrated circuit (IC) which belongs to the family of transistors of bipolar junction type. This type of semiconductor is made up of two semiconductor layers, p-type and n-type, with a junction of two terminals called emitter and collector. This IC is also known as “Darlington” device because of its distinct construction. When designed properly, the device contains two transistors, each having their own collectors and emitters, which were joined together to form one functional unit.
The main application field of the DME201010R is power management, circuit protection and medical equipment. This IC employed when high-current capability and reliability are needed, as it has a low saturation voltage and high input impedance. It can be also used in voltage converters, as it has a high switching speed. Apart from this, this IC is also used in flyback converters and phase ICs to reduce the number of components used in the circuit.
The working principle of the DME201010R can be understood by considering the diagram below. In the diagram, the two transistors are connected together in a “Darlington pair” arrangement. This arrangement allows the current to pass through the device with minimum losses. The voltage applied on the base terminal of the first transistor is amplified and then applied to the base terminal of the second transistor. Thus, a much higher current is allowed to flow between the emitter and the collector terminal of both the transistors. However, the voltage drop across the device is kept very low, increasing the efficiency of the device.
Additionally, the DME201010R is also able to switch higher loads with a minimum amount of power. This can be explained by its ability to maintain a constant voltage at the output even when the load is increased. Further, the device can also protect other components from breakdowns and overvoltage when the voltage exceeds a certain threshold. Furthermore, the control of the DME201010R is done by external accessories. For example, the transistor can be used for logic control or for pulse-width modulation.
In summary, the DME201010R is a bipolar junction transistor array used in many different applications. Its usage in the field of power management, circuit protection and medical equipment has made it a very popular option in constructing various circuits and systems. Its ability to efficiently manage the high currents, to protect other components, and to control logic and pulse-width modulation is what makes it one of the most useful devices in the world of semiconductors.
The specific data is subject to PDF, and the above content is for reference
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