DMHC4035LSD-13

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The DMHC4035LSD-13 is a MOSFET array of two N-Channel enhancement mode vertical DMOS FETs designed for use in high voltage, low current applications. The device is capable of operating at up to 600V and can take up to 3A of drain current.

The DMHC4035LSD-13 is composed of two parallel-connected N-channel enhancement mode vertical DMOS FETs with a standard threshold voltage of 2.5V. The FETs are constructed by modifying the conventional planar MOSFET structure through application of a ‘self-aligned’ silicon process technology manufacturing technique. It is designed with an advanced process to ensure a very low RDS(on) value making it superior to other types of FETs with similar ratings.

The main advantages of the DMHC4035LSD-13 are its excellent thermal resistance due to the vertical structure and very low thermal stress induced in the semiconductor materials. This saves cost in applications where power losses are significant but not necessarily in the same magnitude as conventional transistors. The device has a very low on-resistance and features fast switching action with a wide dynamic range. It also demonstrates excellent ESD performance.

The DMHC4035LSD-13 can be used in a variety of applications such as motor control, brushless DC motor control, photoflash, switches and circuits with high filtering requirements. It is also ideal for use in high power switching applications requiring high efficiency and high power handling capability. Additionally, the device is suitable for applications in solar inverters, light dimming control systems and power supply regulation.

The DMHC4035LSD-13 works on the principle of avalanche breakdown, which is also known as avalanche multiplication. This is a process in which minority carriers are multiplied by a large number of collisions between electrons and holes. These collisions are caused by an electric field and are known as Lorentz force. The avalanche multiplication process takes place under a reverse bias voltage or an electric field of sufficient magnitude.

The conduction of charge through the DMHC4035LSD-13 occurs when a large electric field is applied across the gate and source terminals, which causes a field-effect between the two and creates an inversion layer. This inversion layer becomes conductive and forms a channel for electrons to flow from the source to the drain. This mechanism is known as the field effect transistor and it is the principle of operation for modern MOSFET devices.

In conclusion, the DMHC4035LSD-13 is an excellent device for a variety of high voltage, low current applications. It is an extremely efficient device with fast switching action, low thermal stress and good ESD performance. It is easy to use and provides excellent results, making it a popular choice for a wide range of applications.

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