Allicdata Part #: | DMHC4035LSDQ-13-ND |
Manufacturer Part#: |
DMHC4035LSDQ-13 |
Price: | $ 0.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET BVDSS: 31V 40V SO-8 |
More Detail: | Mosfet Array 2 N and 2 P-Channel (H-Bridge) 40V 4.... |
DataSheet: | DMHC4035LSDQ-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.32458 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N and 2 P-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta), 3.7A (Ta) |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 3.9A, 10V, 65 mOhm @ 4.2A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.9nC @ 4.5V, 5.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 574pF @ 20V, 587pF @ 20V |
Power - Max: | 1.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The DMHC4035LSDQ-13 is an integrated logic sub circuit that contains four individual N-Channel MOSFETs. It is developed by ON Semiconductor which is a leading supplier of semiconductor-based solutions. This particular integrated logic sub circuit is the THINPAK package and features a low RDS(on).
Application Field
The DMHC4035LSDQ-13 can be used in various applications, such as power supply, motor driver and light sensor. Most often, these integrated logic circuits are used in devices that require low-voltage and high-current operations. It is also used in applications where high switching frequency is needed such as medical equipment and communication equipment. In addition, it is also used in industrial and automotive applications. These integrated circuits are ideal for high-density design requirements where space is limited in a device.
Working Principle
The DMHC4035LSDQ-13 works through the use of N-Channel MOSFETs. Each individual FET element is connected in series between the power supply and the load. The FETs can be turned on and off with the use of a gate voltage applied across its respective gate terminals. Depending on the gate bias, the resistance through each of the FET elements will vary. When gate voltage is applied, it will turn the devices on and this will reduce the internal resistance and allow more current to flow through the circuit. When the gate voltage is not applied, the FET devices will be in an off state and this will increase the internal resistance, resulting in less current flow through the circuit.
The DMHC4035LSDQ-13 is capable of withstanding high inrush currents and also has built-in protection features. This provides device protection against prolonged high-temperature operation and also against over-voltage and short-circuit conditions. It is also designed to maintain low on-resistance and RDS(on) saturation. These features make it highly reliable and suitable for use in a wide range of applications.
Overall, the DMHC4035LSDQ-13 is an integrated logic sub circuit that is suitable for use in many applications due to its capability for withstanding high inrush currents, protection against over-voltage and short-circuit conditions, as well as its capability for maintaining low on-resistance and RDS(on) saturation. The DMHC4035LSDQ-13 is an excellent choice in applications that require low-voltage, high-current operations, high switching frequency, and high-density devices.
The specific data is subject to PDF, and the above content is for reference
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