DRV110PWR

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Power MOSFETs are widely used in power converters, automotive systems, and industrial systems. Gate-driver Integrated Circuits (ICs) are necessary in order to properly drive the gates of these MOSFETs and to ensure reliable operation. DRV110PWR is one such integrated device, designed on Texas Instruments’s proprietary low-on-resistance (LOR) process technology. It is an ideal choice for driving power MOSFETs in a wide range of applications.The DRV110PWR is a high-power integrated gate-driver IC, designed for driving high voltage/current N-Channel power MOSFETs and IGBTs in applications such as motor control, AC/DC power converters, and lighting applications. The IC is based on an advanced Level Shifting and Low Side driver topology, using N-Channel and P-Channel power MOSFETs to drive the main power devices. This architecture ensures excellent power efficiency and switching performance.The DRV110PWR IC provides a wide range of features, such as integrated power-MOSFET gate driving, level shifting, current sensing, under-voltage lockout (UVLO), logic control, over-temperature protection (OTP) and automatic dead-time control. It is available in a compact MSOP-8 package which can be used in space-constrained applications.The main application of the DRV110PWR includes AC/DC power conversion, motor speed control, lighting control, DC-DC converters, industrial systems, and automotive systems. In motor speed control applications, the IC can be used to accurately control the motor speed. It provides features such as adjustable operating frequency, adjustable dead-time and PWM dimming. In AC/DC power conversion applications, it can be used to improve power efficiency by providing fast switching speeds and low-on-resistance. It also provides features such as overload protection, soft-start, over-voltage protection and adjustable over-current limit.The DRV110PWR has a simple one-chip solution for driving high power MOSFETs and IGBTs. It consists of a high-power full-bridge circuit, integrated level shifting circuitry, current sensing circuitry, and power-on reset (POR) circuitry. The high-side and low-side power MOSFETs are driven by separate transistor drivers which provide fast-switching times and ensure low-on-resistance. An integrated PWM dimming circuit can also be used to modify the dead-time of the device.The integrated Level-Shifting and Low-Side driver architecture ensures high efficiency and low on-resistance switching. The level shifting circuitry enables the IC to interface with various logic voltage levels and the low-side driver ensures low-on-resistance switching. The integrated current sense amplifier allows for current limitation, increasing system safety. The logic control inputs, along with the UVLO and OTP circuitry, provide additional protection for the device and the system.The DRV110PWR is a highly integrated solution designed to simplify the design of power converters and motor control applications. It provides fast switching speeds, low-on-resistance, and thermal protection, which makes it an ideal choice for high power applications. The integrated level shifting and low-side driver enable fast switching and low-on-resistance, increasing power efficiency. The integrated logic control, PWM dimming, and current limiting functions provide additional safety for the device and the system.

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