Allicdata Part #: | DS1225Y-200IND+-ND |
Manufacturer Part#: |
DS1225Y-200IND+ |
Price: | $ 15.02 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | IC NVSRAM 64K PARALLEL 28EDIP |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8)... |
DataSheet: | DS1225Y-200IND+ Datasheet/PDF |
Quantity: | 1000 |
36 +: | $ 13.65330 |
Series: | -- |
Packaging: | Tube |
Part Status: | Not For New Designs |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 64Kb (8K x 8) |
Write Cycle Time - Word, Page: | 200ns |
Access Time: | 200ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 28-DIP Module (0.600", 15.24mm) |
Supplier Device Package: | 28-EDIP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is an integral component in physical computing and digital data storage. The most widely used type of memory is Random Access Memory (RAM), which temporarily stores instructions, data and calculation output. RAM is fast, volatile and expensive, but its speed and affordability make it suitable for many applications.
The DS1225Y-200IND+ is a type of RAM, specifically a 1 Megabit (1MB) static RAM chip. It is a 32K x 1 bit DRAM chip in a plastic package that can either be used as a single read/write memory or as a multi-chip module (MCM). Its static RAM technology is ideal for high-speed operation, and its low-power operation is suitable for battery-powered systems.
The DS1225Y-200IND+ provides the following features and benefits:
- Fast performance: the chip offers a guaranteed access time of 70ns
- Low power consumption: the chip consumes only 70 mW at 5V from a single 3.3V supply
- High density: the chip packs 5.6 million transistors into an 8-pin package
- Versatility: the chip can be used in single and multi-chip module (MCM) configurations
- Robustness: the chip is manufactured using advanced CMOS process technology
Due to the excellent performance, speed and low power requirements of the DS1225Y-200IND+, it is suitable for a range of applications, from embedded systems and handheld devices to telecommunications and consumer electronics. It is particularly well-suited for systems where low power consumption is a priority.
The DS1225Y-200IND+ works by storing data or instructions in static RAM cells, which are constructed from transistors. Each cell contains two transistors and a single capacitor, which stores a single bit of data. When the cell is written to, the capacitor is charged or discharged depending on the data being written. When the cell is read, the transistor either allows or prevents a current from flowing, depending on the charge in the capacitor.
The chip is also capable of refreshing data at predetermined intervals. This process is necessary in order to keep data stored in the chip’s cells, since the capacitor will gradually lose its charge over time. The refresh process involves cycling through the cells one by one, recharging the capacitor and restoring the cell’s data.
In summary, the DS1225Y-200IND+ is an ideal memory solution for embedded systems and other applications that require fast, low-power operation. Its fast access speed, low power consumption, high density and robustness make it the perfect choice for modern memory applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
P270-DS12R5K | TT Electroni... | 5.39 $ | 1000 | POTENTIOMETEROhm Gang ... |
DS1259S | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER 16-SOI... |
DS1259 | Maxim Integr... | -- | 62 | IC BATTERY MANAGER 16-DIP... |
DS1259N | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER IND 16... |
DS1259SN | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER IND 16... |
DS1259S/T&R | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER IND 16... |
DS1259SN/T&R | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER IND 16... |
DS1259S+ | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER 16-SOI... |
DS1259+ | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER 16-DIP... |
DS1259SN+ | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER IND 16... |
DS1259S+T&R | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER 16-SOI... |
DS1259SN+T&R | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER IND 16... |
DS1244WP-120 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1244YP-70 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1244WP-120IND | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1244W-120 | Maxim Integr... | 0.0 $ | 1000 | IC SRAM 256K 3.3V 120NS 2... |
DS1248YP-70 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1248WP-120 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1244W-120IND | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 28-DIP... |
DS1248WP-120IND | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1248W-120 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 32-DIP... |
DS1248Y-100IND | Maxim Integr... | -- | 1000 | IC RTC PHANTOM PAR 32-DIP... |
DS1248W-120IND | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 32-DIP... |
DS1251YP-70 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1251WP-120 | Maxim Integr... | -- | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1251W-120 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 32-DIP... |
DS1251Y-70 | Maxim Integr... | -- | 1000 | IC RTC PHANTOM PAR 32-DIP... |
DS1251WP-120IND | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1251W-120IND | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 32-DIP... |
DS1254WB-150 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 168-BG... |
DS1254YB-100 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 168-BG... |
DS12885QN | Maxim Integr... | 0.0 $ | 1000 | IC RTC W/RAM 128 BYTE IND... |
DS12885SN | Maxim Integr... | 0.0 $ | 1000 | IC RTC CLK/CALENDAR PAR 2... |
DS12885N | Maxim Integr... | 0.0 $ | 1000 | IC RTC CLK/CALENDAR PAR 2... |
DS12885 | Maxim Integr... | -- | 1000 | IC RTC CLK/CALENDAR PAR 2... |
DS12885T/T&R | Maxim Integr... | 0.0 $ | 1000 | IC RTC CLK/CALENDAR PAR 3... |
DS1284Q/T&R | Maxim Integr... | 0.0 $ | 1000 | IC RTC CLK/CALENDAR PAR 2... |
DS1284QN/T&R | Maxim Integr... | 0.0 $ | 1000 | IC RTC CLK/CALENDAR PAR 2... |
DS12885QN/T&R | Maxim Integr... | 0.0 $ | 1000 | IC RTC CLK/CALENDAR PAR 2... |
DS12885S/T&R | Maxim Integr... | 0.0 $ | 1000 | IC RTC CLK/CALENDAR PAR 2... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...