| Allicdata Part #: | DS1230W-100IND-ND |
| Manufacturer Part#: |
DS1230W-100IND |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Maxim Integrated |
| Short Description: | IC NVSRAM 256K PARALLEL 28EDIP |
| More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ... |
| DataSheet: | DS1230W-100IND Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | NVSRAM |
| Technology: | NVSRAM (Non-Volatile SRAM) |
| Memory Size: | 256Kb (32K x 8) |
| Write Cycle Time - Word, Page: | 100ns |
| Access Time: | 100ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 3 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Through Hole |
| Package / Case: | 28-DIP Module (0.600", 15.24mm) |
| Supplier Device Package: | 28-EDIP |
| Base Part Number: | DS1230W |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DS1230W-100IND is a non-volatile SRAM memory product designed to provide reliable data storage and retrieval, especially in harsh operational environments. It is based on high-density, environmentally-friendly silicon. This kind of memory is commonly used in many industrial and military applications, including aerospace, data acquisition systems, embedded applications, and optical recording. One of the features of the DS1230W-100IND that makes it well-suited for military and aerospace applications is its ability to operate in temperatures ranging from -55°C to +125°C. This range of temperatures is much greater than what is found in the average consumer-grade product. The DS1230W-100IND is based on a static random access memory (SRAM) technology, which makes it highly reliable and suitable for most data storage needs. This kind of memory is also known for being able to store and retain data for much longer periods of time than other types of memory. SRAM provides a high degree of parallel access, which makes it faster and more efficient than other kinds of memory. The DS1230W-100IND also features hardware protection circuitry, which helps to guard data against loss or corruption due to environmental or electrical influences. This circuit works by ensuring that the data stored in the memory is kept consistent, even when subjected to electrical noise or other external influences like vibration or humidity. The DS1230W-100IND has a simple, user-friendly architecture which makes it easy to integrate into applications. It has a 100K-bit capacity and can operate at a variety of voltages. This chip is designed to provide a high level of performance that ensures reliable data transfer and storage for demanding applications. All in all, the DS1230W-100IND is an excellent choice for those who need a reliable memory storage solution for harsh environments and demanding applications. It combines a high level of performance with a wide temperature range and hardware protection circuitry, making it suitable for many different industries.
The specific data is subject to PDF, and the above content is for reference
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DS1230W-100IND Datasheet/PDF