Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	NVSRAM
Technology:	NVSRAM (Non-Volatile SRAM)
Memory Size:	4Mb (512K x 8)
Write Cycle Time - Word, Page:	100ns
Access Time:	100ns
Memory Interface:	Parallel
Voltage - Supply:	4.75 V ~ 5.25 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Through Hole
Package / Case:	32-DIP Module (0.600", 15.24mm)
Supplier Device Package:	32-EDIP
Base Part Number:	DS1250AB

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DS1250AB-100IND+ Memory Application Field and Working Principle

Introduction

DS1250AB-100IND+ is a low-power CMOS Static RAM (SRAM) manufactured by Dallas Semiconductor. It is a non-volatile and battery-backed SRAM that is suitable for many industrial, consumer, and aerospace applications. The memory package includes an 8-pin DIP package with 512K (64K x 8) bits of memory plus three independent voltage-regulator circuits. It provides excellent reliability, durability, performance, and low power consumption.

Application Fields

DS1250AB-100IND+ is suitable for a wide range of industrial and consumer applications. It is a particularly good choice for applications that require high data rates, reliability, and low power consumption, such as industrial instrumentation, embedded system control, data logging, and process control.Additionally, DS1250AB-100IND+ is used in a variety of aerospace applications, including aircraft navigation, avionics control, and satellite data acquisition. In order to reduce the overall power consumption of aerospace systems, DS1250AB-100IND+ can be used to store essential data in non-volatile RAM (NVRAM). This NVRAM eliminates the need for frequent system initialization and recalibration, leading to significant cost and power savings.

Working Principle

The DS1250AB-100IND+ is organized as 8,192 x 8 memory array, with a total capacity of 64 kilobits (64K). The array is organized as bytes, nibbles (4-bit), words (16-bit) and doublewords (32-bit).The DS1250AB-100IND+ can be programmed in two ways: Serial Page Write and Byte Mode Write. The Serial Page Write mode allows 32-byte blocks of data to be written to the memory cell in a single cycle, providing fast data entry. The Byte Mode Write mode allows data to be written to the memory cell one byte at a time.Both modes provide fast random access and low power consumption. The Byte Mode Write mode is ideal for applications that require small memory writes, such as data logging or process control. The DS1250AB-100IND+ also supports a built-in charge pump which maintains a constant voltage level. This helps to ensure that the memory contents remain consistent even in the event of a momentary power loss.

Conclusion

In conclusion, the DS1250AB-100IND+ SRAM is a low-power and reliable memory solution ideal for a variety of industrial, consumer, and aerospace applications. Its low power consumption and fast random access make it well suited for applications requiring frequent memory writes, such as data logging and process control. Additionally, its built-in voltage regulator provides excellent data retention during power loss.

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