DS2227-100 Allicdata Electronics
Allicdata Part #:

DS2227-100-ND

Manufacturer Part#:

DS2227-100

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 4M PARALLEL 72SIMM
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (128K x 3...
DataSheet: DS2227-100 datasheetDS2227-100 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (128K x 32, 256K x 16, 512K x 8)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Socket
Package / Case: 72-SIMM
Supplier Device Package: 72-SIMM
Base Part Number: DS2227
Description

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DS2227-100 is a type of memory found in a variety of electronic devices. It is an Integrated Circuit (IC) memory chip that reads and writes binary data using a process called "addressing". Addressing is a method of referencing memory locations in order to locate a specific bit of data. The DS2227-100 chip is used in a variety of applications, including automotive and industrial applications, gaming, audio devices, medical instruments, and security systems.

DS2227-100 is a Dynamic Random Access Memory (DRAM) chip. This type of memory stores data using a technique whereby the capacitor in each memory cell stores a bit of data. The process of writing data to a DRAM chip requires that the capacitor in each cell be charged and discharged in order to change its state. This technique is known as "refreshing" and it allows the DRAM chip to hold large amounts of data. The DS2227-100 chip is designed to store up to 384 KB of data.

The DS2227-100 chip works by first precharging the capacitors in each memory cell. This precharging process sets the voltage of the cells to a specific level so that a write operation can be performed. When a write command is issued, the DS2227-100 chip performs the operation by charging the capacitor with a specific amount of current. This current is determined by the cell address. Once the capacitor has been charged, the data can be written to the cell. The DS2227-100 chip then reads the voltage of the cell to determine whether the data was written correctly.

The DS2227-100 chip is also able to read data from a memory cell. When a read command is issued, the chip will precharge the cells and then measure the voltage of the cell. If the voltage of the cell is higher than the precharge voltage, the chip will interpret the data as a "1". If the voltage is lower than the precharge voltage, the chip will interpret the data as a "0". The DS2227-100 can then store this data in a temporary register, which can be accessed at a later time.

The DS2227-100 chip is extremely versatile and is used in a variety of applications. Its high speed, low power consumption, and high storage capacity make it a popular choice for embedded memory applications. Additionally, its refresh capability ensures that the data stored in its cells remains intact over time. The DS2227-100 is an ideal choice for those looking for a reliable and dependable memory chip.

The specific data is subject to PDF, and the above content is for reference

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