DSA7503S0L

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A DSA7503S0L is a single bipolar transistor (BJT) which is used for a variety of applications. It is a low-power NPN silicon junction transistor made from germanium, and can be used for general-purpose switching and amplification, as well as for smaller signal microwave applications. The device has a relatively low saturation voltage, which makes it well suited for low-voltage operation, such as in switching regulators and DC-DC converters. It can also be used as an audio amplifier, or as a voltage-controlled oscillator (VCO) in radio frequency (RF) circuits.

DSA7503S0L Features

The DSA7503S0L is a silicon NPN Bipolar Single Transistor with a EBC common emitter configuration. It has a collector-base voltage of 30V and a collector current of 0.5A. It features high breakdown voltage, high current gain with very low noise and distortion, low saturation voltage, and excellent temperature stability. The package includes an external base terminal, which allows for better thermal dissipation, as well as improved signal response. It has a low power dissipation, and is unaffected by thermal cycling.

DSA7503S0L Applications

The DSA7503S0L is ideal for a variety of low-power applications, such as in relay and switching circuits, transistor switching circuits, transducer amplifiers, DC-DC converters, and velocity transducers. It can also be used as an oscillator for audio amplification and for tone control in telephone equipments. It can additionally be used for low-level control of low-power DC motors, and can also be used as an amplifier for general purpose switching applications.

DSA7503S0L Working Principle

The DSA7503S0L transistors work according to the principle of a base-collector junction diode. It is basically a forward-biased diode with a thin insulated base layer between the collector and emitter contacts. This base insulating layer allows the transistor to register a decrease in collector current when a reverse-biased voltage is applied to the base-collector junction.

A very low base current (IB) is required to produce a relatively large collector current (IC). The ratio of collector current to base current is the current gain of the transistor, which is expressed as hFE. This is usually designated as the Early voltage and is measured in volts (Vce). This base current is inversely proportional to the magnitude of the reverse-biased base-collector voltage, which is referred to as the collector-base voltage (Vbe) - or the cutoff voltage.

The DSA7503S0L can be operated in regions known as cut-off, active, and saturation - depending on the magnitude of the reverse-biased base-collector voltage (Vbe). The saturation region produces high collector current, while the active region produces low-to-medium collector current. The cut-off region produces no collector current. The DSA7503S0L transistor can handle a maximum collector-emitter voltage (Vce) of up to 30 volts.

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