DSA7U0100L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 150mA, 10V
Power - Max:	1W
Frequency - Transition:	120MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	MiniP3-F2-B
Base Part Number:	DSA7U01

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IntroductionThe DSA7U0100L is a single bipolar junction transistor (BJT) typically used for power and frequency applications. As a BJT, the DSA7U0100L offers superior gain and performance compared to other commonly used semiconductor devices. The DSA7U0100L can be used as a single-emitter switch, power amplifier, and amplifier applications. Additionally, the DSA7U0100L is also well suited for use in circuits requiring both current amplification and voltage regulation. Application FieldsThe DSA7U0100L is a great device for a wide range of applications including video and audio power amplifiers, switching power converters, motor control, and industrial automation. With its integrated lateral N-channel MOSFET, the DSA7U0100L also offers superior low voltage performance. This makes it a great choice for applications such as automotive, battery powered equipment, and portable systems. In addition, the DSA7U0100L is suitable for applications requiring wide frequency range, such as radio-frequency circuits and mobile communications systems.Working PrincipleThe working principle of the DSA7U0100L is based on the concept of bipolar junction transistors (BJT). BJTs are three-terminal semiconductor devices that are current-controlled and voltage-controlled devices commonly used as an element of electrical circuit designs. The DSA7U0100L is a single BJT and is made up of an emitter, collector, and base. It has a certain amount of current gain which is represented by the combination of a transistor\'s βf and βr. The current gain of a BJT is determined by the ratio of collector current flowing to the emitter current. In the DSA7U0100L, the base-collector junction is designed to act as a diode for efficiently helping to generate the collector current. This allows the DSA7U0100L to produce higher gains with smaller amounts of current. Additionally, the DSA7U0100L is also specifically designed to have low saturation voltage. This allows for efficient and reliable operation in both power and frequency applications. ConclusionThe DSA7U0100L is a single bipolar junction transistor (BJT) primarily used for power and frequency applications. It is a three-terminal semiconductor device that is current-controlled and voltage-controlled, offering superior gain and performance compared to other semiconductor devices. The DSA7U0100L can be used in various applications including video and audio power amplifiers, switching power converters, motor control, and industrial automation. Additionally, it is suitable for applications requiring wide frequency range such as radio-frequency circuits and mobile communications systems. The working principle of the DSA7U0100L is based on the concept of BJTs where it has a certain amount of current gain that is determined by the ratio of collector current flowing to the emitter current. This makes the DSA7U0100L a great choice of device for a wide range of applications.

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