DSC2C01S0L Allicdata Electronics
Allicdata Part #:

DSC2C01S0LTR-ND

Manufacturer Part#:

DSC2C01S0L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 100V 0.02A MINI3
More Detail: Bipolar (BJT) Transistor NPN 100V 20mA 140MHz 200m...
DataSheet: DSC2C01S0L datasheetDSC2C01S0L Datasheet/PDF
Quantity: 3000
3000 +: $ 0.04392
6000 +: $ 0.03953
15000 +: $ 0.03514
30000 +: $ 0.03294
75000 +: $ 0.02928
Stock 3000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2mA, 10V
Power - Max: 200mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G3-B
Base Part Number: DSC2C01
Description

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Bipolar junction transistors (BJTs) are three-terminal semiconductor devices that can be used to amplify electrical signals. They are available in single, dual and multi configurations and are used in many analog applications. One popular BJT is the DSC2C01S0L, a NPN (negative-positive-negative) type of transistor. This article will discuss the application field and working principle of the DSC2C01S0L transistor.

The DSC2C01S0L can be used in power amplifiers, audio circuits, line drivers, and high-frequency switching amplifiers. The transistor has a maximum collector-emitter rating of 40V and a maximum collector power dissipation of 1W. It is also capable of providing current gain up to 200mA at a typical collector current of 4mA. The device is designed for switching applications and provides a fast rise time and fall time.

The working principle of the DSC2C01S0L is based on the NPN transistor type, which has three terminals called the emitter, base, and collector. The base-emitter junction is reverse biased and the collector-emitter junction is forward biased. When a voltage is applied to the base-emitter diode, it enables current to flow between emitter and collector. This current “amplification” is called beta current gain. The amount of current amplified is proportional to the voltage applied to the base-emitter junction. The current gain can be adjustable and is a significant feature of the DSC2C01S0L.

The DSC2C01S0L is well suited for applications that require fast switching, high-gain and high-power dissipation. It is an attractive choice for audio, line driver, and switching applications. Due to its fast rise time and fall time, the device can increase overall system performance. Additionally, its high current gain capabilities make it a suitable choice for power applications.

In summary, the DSC2C01S0L is a NPN BJT transistor with fast switching speeds and high current gain. It can be used in power amplifiers, audio circuits, line drivers, and high-frequency switching amplifiers. The device has a maximum collector-emitter rating of 40V and a maximum collector power dissipation of 1W. It is also capable of providing current gain up to 200mA at a typical collector current of 4mA. With these features, the device is an attractive choice for applications that require high speed, high power and high current gain.

The specific data is subject to PDF, and the above content is for reference

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