Allicdata Part #: | DSC5C01S0LTR-ND |
Manufacturer Part#: |
DSC5C01S0L |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 100V 0.02A SMINI3 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 20mA 140MHz 150m... |
DataSheet: | DSC5C01S0L Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05570 |
6000 +: | $ 0.05013 |
15000 +: | $ 0.04456 |
30000 +: | $ 0.04178 |
75000 +: | $ 0.03713 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 20mA |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 600 @ 2mA, 10V |
Power - Max: | 150mW |
Frequency - Transition: | 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2-B |
Base Part Number: | DSC5C01 |
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DSC5C01S0L is a single bipolar (BJT) transistor, and as such it is a three-terminal device with a single active region. This type of transistor has two primary applications: switching and amplifying. It is used in a wide range of applications from low-power circuits to large motor and power transformer loads, providing signals, switching power, and creating alternating currents and voltages.
When it comes to its working principle, a Bipolar Junction Transistor (BJT) functions by having two p-n junctions (an NPN or PNP) which are connected internally, forming two gates that allow the free flow of carriers from the collector to the emitter when the appropriate voltage is applied to the base. The role of the collector and emitter are to transport electrons and holes respectively. When a forward bias voltage is applied to the Base-Emitter junction, carriers flow from the emitter to the collector. When the Base-Emitter junction is reverse biased, this flow of carriers is reversed. The amount of current that flows between the collector and emitter is directly proportional to the voltage applied to the base. If a higher voltage is applied to the base, more carriers will flow, increasing the current between the collector and emitter.
The DSC5C01S0L is an NPN Device, and as such the positive voltage is applied to the collector and the negative voltage is applied to the emitter. In reverse bias configuration, when a negative voltage is applied to the Base-Emitter junction, electrons flow from the collector to the base, and this in turn produces an amplified voltage from the collector to the emitter. This amplified voltage can be used for amplifying signals or powering load circuits like motors and power transformer components when used with the appropriate power control circuits.
When used in switching applications, the DSC5C01S0L can be used as a flip-flop, turn-on delay device, gate driving circuit, and more. When voltage is applied to the Base-Emitter junction, carriers will flow from the emitter to the collector and current can then be switched on and off by applying different voltages to the base. With the appropriate input signals, these transistors can be used to control the timing and switching of power to a given load, allowing for the embedded control of complex circuits.
In summary, the DSC5C01S0L is a single bipolar (BJT) transistor, which is a three-terminal device with a single active region. Its main application is for switching and amplifying signals, although it can also be used for powering load circuits or for embedded control. Its working principle is based on two p-n junctions (NPN or PNP), forming two gates that allow the free flow of carriers from the collector to the emitter when the appropriate voltage is applied to the base.
The specific data is subject to PDF, and the above content is for reference
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