Allicdata Part #: | DSC5G02D0L-ND |
Manufacturer Part#: |
DSC5G02D0L |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 20V 0.015A SMINI3 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 15mA 650MHz 150mW... |
DataSheet: | DSC5G02D0L Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.03387 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 15mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 65 @ 1mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 650MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2-B |
Base Part Number: | DSC5G02 |
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DSC5G02D0L is a type of n-channel insulated gate bipolar transistor (IGBT) which is used in power electronic circuits. It is a low-voltage, high-speed transistor designed for applications ranging from medium voltage switchgear and induction motor drives to high-end motor drive power electronics.
A IGBT is basically a bi-directional, field-effect transistor whose active elements are two or more insulated gate field-effect transistors (IGFs). In an IGBT, the two IGFs are connected in an alternating fashion, so that the IGFs on either side of the transistor can be used to control the current either in the forward or in the reverse direction. This allows the transistor to switch power in both directions.
The DSC5G02D0L uses an innovative structure which offers various advantages over other power electronic devices. For instance, the IGBT structure eliminates the need for a clamp diode, as it is logic-level compatible. Moreover, its fast switching capability, combined with its low drop characteristics, makes it especially suitable for high-frequency applications, such as variable-speed motor drive applications.
The DSC5G02D0L has a maximum continuous drain current of 40 A and a maximum gate-source voltage of 800 V, making it suitable for medium to high power applications. It also has a slow turn-off characteristic, which increases its lifetime. Additionally, it has a dv/dt of 2.5 V/μs at 2 A which allows better control and regulation of its current.
The working principle of the IGBT is based on the principle of a standard field-effect transistor. An insulated gate is used to control the flow of electrons between the source and the drain. When a positive voltage is applied to the gate, it attracts electrons and the transistor enters the “on” state, allowing current to flow between the source and the drain. When a negative voltage is applied, the electrons are repelled and the transistor is turned off.
The DSC5G02D0L IGBT offers many advantages over other power electronic devices and is ideal for applications such as variable-speed motor drives and other high-frequency applications. Its innovative structure, improved current control characteristics and slow turn-off time make it an ideal choice for power electronic projects. The DSC5G02D0L IGBT offers reliable performance even in the harshest of environments, making it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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