Allicdata Part #: | DSC5G03T0L-ND |
Manufacturer Part#: |
DSC5G03T0L |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 20V 0.05A SMINI3 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 50mA 1.6GHz 150mW... |
DataSheet: | DSC5G03T0L Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.03387 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 2mA, 10V |
Power - Max: | 150mW |
Frequency - Transition: | 1.6GHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2-B |
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The DSC5G03T0L is a single bipolar junction transistor (BJT) device offering high performance and a wide range of applications. It features a wide dynamic range and a low power dissipation, making it one of the most efficient single devices available. The DSC5G03T0L is also very reliable, which makes it suitable for a variety of conditions and environments.
A bipolar junction transistor (BJT) is a solid-state electronic device that amplifies or switches electronic signals and one of the most commonly used type of transistors. BJTs have three terminal – emitter, base, and collector. A small current at the base of the transistor sets up a larger current at the collector. The ratio of the currents depends upon the Gain of the BJT which ranges from 100 to 10,000. The reverse current of the BJT is very low.
The DSC5G03T0L is an NPN type of BJT. In an NPN BJT, the emitter is connected to the ground and the collector is connected to the voltage at which the BJT operates. When the base of the BJT is forward biased, free electrons from the emitter region enter the base region and move towards the collector. This causes a current between the collector and the emitter.
The DSC5G03T0L has a wide application in a variety of applications due to its low power consumption, high current carrying capacity, and fast switching response. Its high gain makes it ideal for use in amplifiers and other signal processing circuits. It is also used in switching applications such as relays, power switching, and power muxes. The DSC5G03T0L is particularly suitable for applications requiring long-term stability, such as power management and smart meter circuits. It is also used in automotive electronics, alarm systems, and security systems.
The working principle of the DSC5G03T0L is based on the NPN BJT structure. When forward biased, the electrons flow from the emitter to the collector, resulting in a current flow between the collector and the emitter. The current gain is determined by the resistance ratio between the collector and the emitter. The voltage gain is determined by the ratio between the input voltage and the output voltage. The DSC5G03T0L also features a low thermal resistance and a low power dissipation, making it suitable for applications where energy efficiency is important.
The DSC5G03T0L is a highly reliable BJT device suitable for a wide range of applications. It offers high current carrying capacity, excellent gain, fast switching response, and low power dissipation. It is well suited for a variety of conditions and environments, making it a reliable and versatile device.
The specific data is subject to PDF, and the above content is for reference
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