Allicdata Part #: | DSC9F0100LTR-ND |
Manufacturer Part#: |
DSC9F0100L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | RF TRANS NPN 10V 1.9GHZ SSMINI3 |
More Detail: | RF Transistor NPN 10V 50mA 1.9GHz 125mW Surface Mo... |
DataSheet: | DSC9F0100L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 1.9GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 125mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 5mA, 4V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3-B |
Base Part Number: | DSC9F01 |
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The DSC9F0100L is an RF bipolar transistor designed for device operation at 70 to 150 V. It can be used in applications such as broadcast sound and radio receivers, mobile radio, and satellite, where high gain is required. The device features an integrated collector-base junction formed with P+ polysilicon technology to minimize power dissipation and improve overall efficiency. Bipolar transistors, also called BJTs (Bipolar Junction Transistors), are electronic devices made up of three layers or terminals, the base, the collector, and the emitter.
One of the key aspects that sets DSC9F0100L apart from other transistors is its high frequency capability. This model is capable of operating up to 1 GHz, making it ideal for applications such as radio broadcasting and satellite operations. The device features an integrated collector-base junction formed with P+ polysilicon technology, which minimizes power dissipation while simultaneously improving overall efficiency.
The working principle of this transistor is based on charge transfer between the base and the emitter, which are essentially two oppositely doped regions separated by a very thin junction. When the base-emitter junction is forward-biased, majority carriers (holes) from the emitter region will transfer to the base region and minority carriers (electrons) from the base region will transfer to the emitter region. This in turn allows a large amount of current to flow from the collector to the emitter, allowing the transistor to amplify large electrical signals.
The DSC9F0100L can be used in a wide range of RF applications. It can be used in wireless communication systems, such as wireless microphones and mobile phones, as well as in LCD television sets. It can also be used in RF amplifiers and audio amplifier circuits. The transistor exhibits high linearity, and its low power consumption makes it ideal for use in battery-powered applications. Additionally, it features low-noise and high-frequency properties, making it suitable for use in applications where signal quality is of paramount importance.
Overall, the DSC9F0100L is an ideal solution for RF applications that require high gain and high-frequency performance. Its low power consumption and excellent linearity make it a suitable choice for wireless communication systems and audio amplifier circuits. Additionally, its low noise characteristics make it suitable for use in applications where signal quality is of utmost importance.
The specific data is subject to PDF, and the above content is for reference
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