Allicdata Part #: | DSC9A01S0LTR-ND |
Manufacturer Part#: |
DSC9A01S0L |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 40V 0.05A SSMINI3 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 50mA 150MHz 125mW... |
DataSheet: | DSC9A01S0L Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.14963 |
6000 +: | $ 0.13931 |
15000 +: | $ 0.13759 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 600 @ 2mA, 10V |
Power - Max: | 125mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3-B |
Base Part Number: | DSC9A01 |
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DSC9A01S0L is an NPN silicon epitaxial planar type transistor used in various applications, such as drive circuits and low frequency amplification. It has an excellent DC current gain and is able to operate in a wide range of frequencies, from low to high. The transistor is also suited for use in conjunction with TTL and CMOS digital integrated circuits. It has a low collector-emitter saturation voltage, low base-emitter saturation voltage, and low collector-emitter leakage current. Its high yield and durability make it an ideal choice for many types of circuits.
For its applications, the DSC9A01S0L has two main usage scenarios: using it as an audio amplifier or as a switch. When used as an audio amplifier, the transistor is capable of delivering high-power output with little or no distortion. When used as a switch, it can be controlled by applying a low level signal to the base. This causes the transistor to either conduct or not conduct the current.
The DSC9A01S0L’s working principle depends on the properties of Silicon. It is a bipolar junction transistor (BJT) which involves two semiconductor layers, the Base/Emitter junction and the Base/Collector junction. A small current is applied to the base terminal, and this changes the conductivity of the device according to the bias polarity. This current then flows from the collector to the emitter, due to the change in conductivity. An amplified current is then obtained at the collector terminal.
In summary, the DSC9A01S0L is a great choice when it comes to low frequency amplification, drive circuits and audio amplifiers, due to its low saturation voltage and collector-emitter leakage current characteristics. It is a single bipolar junction transistor (BJT) which functions by applying a small current to the base and controlling the conductivity of the device.
The specific data is subject to PDF, and the above content is for reference
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