DSC9G02D0L Allicdata Electronics
Allicdata Part #:

DSC9G02D0L-ND

Manufacturer Part#:

DSC9G02D0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 30V 0.015A SSMINI3
More Detail: Bipolar (BJT) Transistor NPN 30V 15mA 650MHz 125mW...
DataSheet: DSC9G02D0L datasheetDSC9G02D0L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
Power - Max: 125mW
Frequency - Transition: 650MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B
Base Part Number: DSC9G02
Description

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DSC9G02D0L is a single bipolar junction transistor (BJT) usually used in the field of communication and signal-switching circuits of digital logic. It has a wide range of applications including, for instance, radio transmitters and receivers, digital telecommunication networks, television signal processing, and data communication systems. This device utilizes the unipolar or bipolar nature of the majority-carrier electron flow of semiconductors. Basically, a BJT has three terminals: the collector, the base, and the emitter. The BJT also has two internal junctions: a base-emitter junction and a base-collector junction.

In a BJT the current flow between collector and emitter is controlled by the base current. When no current flows through the base-collector junction, the transistor is in the OFF state (cut-off) and there is no current flow between collector and emitter. However, when a small current flows through the base-collector junction, the transistor is in its ON state (saturated) and current will flow between collector and emitter. By controlling the base current you can make the transistor switch between OFF and ON state thus controlling the current flow.

The DSC9G02D0L is designed for digital switching applications that require high input impedance and low output impedance. It is an NPN transistor with an insulated gate that is voltage-controlled. The DSC9G02D0L is usually used as an amplifier or a switch. It can be used to amplify small signals so that they can be detected by other circuits, or it can be used as a switch to turn on/off other circuits. The DSC9G02D0L is made up of a silicon substrate and Polycrystalline Ferroelectric Stack (PFS).

The PFS is made up of multiple layers of ferroelectric material that form a capacitor. When a voltage pulse is applied to the gate, the PFS stores charge, which is then released when the voltage pulse is removed. This stored charge then flows into the base of the transistor, causing the transistor to switch. This allows the DSC9G02D0L to be switched on and off quickly in response to a voltage pulse.

In summary, the DSC9G02D0L is an NPN bipolar junction transistor used in digital switching applications that require high input impedance and low output impedance. It is made up of a silicon substrate and a PFS to store charge, which is then released to switch the transistor on and off quickly in response to a voltage pulse. The DSC9G02D0L can be used as an amplifier or a switch, making it a versatile device in the field of communication and signal-switching circuits of digital logic.

The specific data is subject to PDF, and the above content is for reference

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