Allicdata Part #: | DSC9G0200L-ND |
Manufacturer Part#: |
DSC9G0200L |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS RF NPN 20V 15MA SSMINI3 |
More Detail: | RF Transistor NPN 20V 15mA 650MHz 125mW Surface Mo... |
DataSheet: | DSC9G0200L Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10069 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Frequency - Transition: | 650MHz |
Noise Figure (dB Typ @ f): | 3.3dB @ 100MHz |
Gain: | 24dB |
Power - Max: | 125mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 65 @ 1mA, 6V |
Current - Collector (Ic) (Max): | 15mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3-B |
Base Part Number: | DSC9G02 |
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The DSC9G0200L is a bipolar junction transistor (BJT) designed for use in radio frequency (RF) applications. It is manufactured by Diodes Incorporated, a global leader in discrete semiconductor components and electromechanical solutions. The transistor is offered in a through-hole package, and is ideal for applications that require low noise and high gain.
The DSC9G0200L is a NPN silicon BJT. This type of transistor is distinguished from other types of transistorized devices by its three layers – the emitter, base and collector. The emitter is the control electrode of the device, whose current flow modulates the current flow between the collector and the emitter terminals. The base is the internal insulator between the emitter and collector layers, allowing for the current gain produced by the transistor. The collector is the output terminal of the device, whose current from the emitter is amplified or regulated.
The DSC9G0200L has a maximum collector current of 0.2 Amps and can operate at frequencies up to 5GHz. This transistor is ideal for RF amplifier, mixer, and DC-DC converter applications. It can also be used in other low-noise analog circuits where a wide frequency range is required. With this transistor, there is no need for an external bias resistor, as the device’s internal bias resistors are sufficient for best performance.
The DSC9G0200L is ideal for a variety of RF applications. In an RF amplifier application, the device takes in a signal at the base and outputs it at a much higher gain. This results in the amplification of the signal strength, which can then be used to drive a speaker or wireless link. In a mixer application, the distinguished signal is mixed with an external signal within the base, resulting in a higher frequency signal with increased signal strength. In a DC-DC converter application, the transistor takes in a DC signal at the base and outputs it at a different voltage level, while maintaining a higher load current than low-voltage transistors.
The DSC9G0200L is a versatile and dependable solution for a variety of analog and RF applications. It offers a wide frequency range and low noise, making it an ideal choice for those applications that require quiet operation. With its through-hole package, it is also easy to install and use in many different applications.
The specific data is subject to PDF, and the above content is for reference
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