DSS4140U-7 Allicdata Electronics

DSS4140U-7 Discrete Semiconductor Products

Allicdata Part #:

DSS4140UDITR-ND

Manufacturer Part#:

DSS4140U-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 40V 1A SOT-323
More Detail: Bipolar (BJT) Transistor NPN 40V 1A 150MHz 400mW S...
DataSheet: DSS4140U-7 datasheetDSS4140U-7 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Power - Max: 400mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: DSS4140
Description

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The DSS4140U-7 is an economical and reliable bipolar junction transistor (BJT) designed for use in a wide range of industrial and commercial applications. Specifically, this particular model is most suited for those environments where heat dissipation, noise reduction, and low power consumption are of a higher priority. It is ideally suited as a switch, amplifier, and driver, as well as being capable of many other tasks.

It is a single transistor with a collector-emitter voltage rating of 40Vmax, a collector-base voltage rating of 60V max, an emitter-base voltage rating of 6V max, and a DC collector current rating of 2.5A max. Another trait of this particular model is its DC current gain (hFE) of 200min at 25C, making it extremely useful as a switching and amplification element in a wide range of circuits.

In terms of its anti-static capability, the DSS4140U-7 is capable of withstanding an ESD pulse of up to 2kV, making it suitable for sensitive applications. Such durability helps to ensure the device has a long operational life. It is also capable of operating at a wide range of temperatures, anywhere between -55C and 150C.

As this particular model is designed to operate in a wide range of applications, it is important to understand its working principle. To do so, one must first have a basic understanding of transistor physics. A transistor is a semiconductor device consisting of three layers of semiconducting materials. In the case of BJTs, these layers are the base, collector, and emitter.

Essentially, the working principle of a BJT is similar to that of a relay, in that current flows between two terminals when voltage is applied to the third. In the case of the DSS4140U-7, an external voltage is applied between the base and emitter causing a current to flow between the collector and emitter. This current is amplified according to the gain of the device, which is determined by its particular design characteristics.

The DSS4140U-7 is designed to be used in a wide range of applications, including amplifiers and switches, as well as drivers and power supplies. It is an economical and reliable device, owing to its high hFE and broad temperature range. Its anti-static capabilities also make it suitable for sensitive applications. It is also important to have a basic understanding of the transistor’s working principle in order to use the device correctly and safely in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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