Allicdata Part #: | DSS4160DS-7DITR-ND |
Manufacturer Part#: |
DSS4160DS-7 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2NPN 60V 1A SOT26 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A... |
DataSheet: | DSS4160DS-7 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.09296 |
6000 +: | $ 0.08733 |
15000 +: | $ 0.08169 |
30000 +: | $ 0.07493 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 5V |
Power - Max: | 700mW |
Frequency - Transition: | 220MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-26 |
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The DSS4160DS-7 is an excellent array of bipolar junction transistors (BJT), making it an ideal choice for a variety of applications. The most commonly used versions of the DSS4160DS-7 are the "standard" and the "high power" versions. Both versions are designed to offer excellent performance in a wide range of applications. The standard version is usually used in commercial and industrial applications, while the high power version is more suited for military, aerospace, and research applications.
The DSS4160DS-7 features 16 individual NPN transistors, each with its own set of base and collector contacts. All 16 transistors are mounted on a single circuit board, making for a very compact size. Each transistor is capable of handling up to 1.25 Amps and can withstand a maximum voltage of 55 volts. The top and bottom surfaces of the array are solderable, making it easy to connect the DSS4160DS-7 to a range of connection options.
Applications for the DSS4160DS-7 include amplifier circuits, high voltage switching, and DC-DC converters. The array is also suitable for use in sensor applications and in high performance audio equipment. It is typically used in applications that require high switching speeds, low noise levels, and high dynamic voltage range. Due to its small size and high reliability, the DSS4160DS-7 is suitable for a wide range of industrial applications, such as in process control systems, telecommunications equipment, and instrumentation.
The working principle of the DSS4160DS-7 is based on the classic BJT theory. In this type of transistor, a current flows from the base to the emitter when a voltage is applied to the base. As the voltage is increased, a higher current will flow from the base to the collector, creating a larger area of conduction. This allows the transistor to control a large current between the base and the collector terminals. In addition, the base current can also be used to switch on and off higher current transistors, such as power transistors.
The DSS4160DS-7 also offers several advantages over traditional BJTs. For example, the chip has an increased current-handling capability compared to a single BJT. This allows for increased efficiency and reliability in a variety of applications. The array also provides protection against overheating and shorting, making it safer to use in industrial and commercial environments.
Overall, the DSS4160DS-7 is an excellent array of bipolar junction transistors. It offers excellent performance in a wide range of applications, and is suitable for applications that require high switching speeds, low noise levels, and high dynamic voltage range. Its compact size and increased current-handling capability make it an ideal choice for industrial, commercial, and research applications.
The specific data is subject to PDF, and the above content is for reference
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